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Double-layer photoetching process

A photolithography, double-layer technology, applied in optics, opto-mechanical equipment, photosensitive material processing, etc., can solve problems such as large adhesion

Inactive Publication Date: 2005-05-25
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, there are still many problems in the known application of the double layer, for example, a large amount of residues will be attached to the sidewall of the photoresist during the development process of the double layer.

Method used

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Embodiment Construction

[0018] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is specifically cited below and described in detail with reference to the accompanying drawings.

[0019] Figure 1 to Figure 5 Shown is a schematic diagram of a two-layer photolithography process of a preferred embodiment of the present invention. refer to figure 1 First, a non-photosensitive polymer layer (un-photo sensitivity polymer) 102a is formed on the material layer 101 to be patterned on the substrate 100, wherein the formation method of the non-photosensitive polymer layer 102a includes a spin coating method (spin coating) . The material layer 101 to be patterned is, for example, a dielectric layer or a metal layer.

[0020] Next, the non-photosensitive polymer layer 102a is subjected to a soft bake (soft bake) process to remove the solvent in the non-photosensitive polymer layer 102a, so that the non-photosensitive pol...

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Abstract

A double-layer photolithography process is to sequentially form a non-photosensitive polymer layer and an upper photoresist layer on the material layer to be patterned on the substrate, and then expose and develop the upper photoresist layer to form an upper photoresist layer with a pattern layer, and expose a portion of the non-photosensitive photoresist layer. Next, using the patterned photoresist layer as an etching mask, and containing O 2 The / HBr gas is used as a dry etchant for etching, removing the exposed non-photosensitive photoresist layer, and exposing a part of the material layer to be patterned.

Description

technical field [0001] The invention relates to a photolithography process, in particular to a bilayer (Bilayer) photolithography process. Background technique [0002] Under the condition that circuit integration is required to be higher and higher, the design of the size of the entire circuit component should also continue to advance in the direction of size reduction. The most important thing in the whole semiconductor process is the photolithography (Photolithography) process, which is related to the structure of Metal-Oxide-Semiconductor (MOS) components, such as: the pattern of each layer of thin film (Pattern), and doped with The area of ​​impurities (Dopants) is determined by the step of photolithography. In addition, whether the component integration level of the entire semiconductor industry can continue to be narrower than 0.18μm is also determined by the development of photolithography process technology. [0003] In addition, in order t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00G03F7/09G03F7/26G03F7/36H01L21/00
Inventor 林智勇陈俊丞
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD