Preparation of SrBi2Ta2O9 ferroelectric ceramic film by inorganic salt raw material liquid-phase chemical method
A technology of srbi2ta2o9 and ferroelectric ceramics, which is applied in the field of preparation of SrBi2Ta2O9 ferroelectric ceramic films by liquid-phase chemical method of inorganic salt raw materials, which can solve the problems of lack of raw materials, difficult control of multi-component materials, and high price
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Embodiment 1
[0036] 1. Preparation of Soluble Inorganic Salt Raw Materials
[0037] (1) Prepare Bi salt solution: weigh Bi(NO 3 ) 3 ·5H 2 O raw material 29.1 g, add 20 ml of 36% nitric acid solution, heat to 50 ° C, stir for 30 minutes until the solution is clear, add 100 ml of water to dilute to 0.5 mol / l concentration, cool and set aside.
[0038] (2) Preparation of fluorotantalic acid solution: Accurately weigh 6 grams of Ta powder, add 5 ml of hydrofluoric acid to dissolve at room temperature for 2 days, after it is completely dissolved, add 55 ml of water to dilute to a concentration of 0.55 mol / l.
[0039] (3) Preparation of Sr salt solution: accurately weigh Sr(NO 3 ) 2 21.2 grams of raw materials were dissolved in 200 ml of water to form a solution with a concentration of 0.5 mol / l.
[0040] 2. SrBi 2 Ta 2 o 9 Sol preparation
[0041] The preparation of SBT sol is shown in the flowchart of Figure 1. First, put about 10ml of citric acid aqueous solution with a concentratio...
Embodiment 2
[0050] The preparation process steps are the same as those in Example 1, except that in the preparation process of the film, the dipping and pulling method is used to form a film instead of spin coating. The film-forming process of the dipping and pulling method is to put about 30ml of the prepared sol in a beaker, clamp the cleaned substrate with the chuck of the pulling machine, slowly immerse it in the sol, and stand still for 5 seconds. Pull out from the sol at an average speed of 0.5m / min, and then dry it. Other steps are the same as in Example 1. A thin film of SBT about 450 nm thick was obtained.
Embodiment 3
[0052] The preparation process steps are the same as those in Example 1, except that the final sintering temperature is different during the film preparation process. In this example, the sintering temperature is changed from 750°C to 800°C. A thin film of SBT about 450 nm thick was obtained.
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