Method for making semiconductor structure

Abstract

This invention relates to a method for manufacturing a semiconductor structure. First of all, a high dielectric constant (high k) film is formed on a first surface of the backing then before any high temperature heat treatment, a chemical containing halogen is used to clean the back of the second surface opposite to the first to remove pollution of the high k material on the edges of the two surfaces to prevent mutual pollution and ensure the quality and preparation reliability.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor structure, and in particular to a method for manufacturing a semiconductor structure with a high dielectric constant (High Dielectric Constant; High k) thin film. Background technique [0002] Under the miniaturization trend of semiconductor device size, the critical dimension (Critical Dimension; CD) of the device continues to shrink. As semiconductor manufacturing technology enters the nanometer (Nanometer) era, due to the limitations of material properties and manufacturing technology, the miniaturization of semiconductor components is facing severe challenges. [0003] In the current semiconductor manufacturing, most of the silicon dioxide layers are used as the gate dielectric layer of transistor components. In order to increase the operating speed of transistor devices, the thickness of the effective gate dielectric layer needs to be reduced. However, when the effective oxide t...

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Problems solved by technology

[0005] However, when depositing this type of metal oxide or metal oxynitride with a high dielectric constant on the first surface of the substrate, it is very easy to form a high dielectric constant film on the second surface of the substrate opposite to the first surface. Or cause contamination by high dielectric constant particles

Accidentally formed high dielectric constant films or particle contamination on the substrate will not only affect the reliability of subsequent preparations, such as the depth of focus of photolithography preparations, but will also cause a decrease in the electrical stability of transistor components

In addition, high dielectric constant particle contamination on the substrate may fall into the preparation chamber during preparation and contaminate the next batch of processed substrates

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