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Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal

A production method and pre-doping technology, applied in the direction of single crystal growth, single crystal growth, self-regional melting method, etc., can solve the problem of high axial resistivity non-uniformity of silicon single crystal

Active Publication Date: 2007-07-11
ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD +1
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  • Abstract
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  • Application Information

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Problems solved by technology

At the same time, there is still the problem that the radial and axial resistivity of silicon single crystal is too high.

Method used

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  • Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal
  • Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal
  • Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal

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Embodiment Construction

[0017] The production method of zone-melting silicon single crystal combined with vapor phase pre-doping and neutron irradiation doping includes two stages, firstly, after vapor phase pre-doping, neutron irradiation doping is carried out.

[0018] Referring to Figures 1, 2, and 3, in the described evacuation and inflation process, when the inflation pressure reaches a relative pressure of 0.2bar-6bar, stop fast inflation and switch to slow inflation. In the isometric growth process, the diameter maintained by the isodiameter is 20mm-220mm; the pulling speed of the isodiameter maintained is 1mm / min-5mm / min, and the rotation speed of the lower shaft is 1rpm-30rpm. In the described doping process, the doping gas used is phosphine PH 3 , Borane B 2 h 6 , Phosphine PH 3 Mixed gas with argon Ar, borane B 2 h 6 Any one of the four doping gases mixed with argon Ar; Phosphine PH 3 Phosphine PH of mixed gas with argon Ar 3 The relative concentration of argon Ar should be 0.0001% ...

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Abstract

The invention discloses a zone melting process monocrystalline silicon manufacturing method of gas-phase pre-blending and neutron irradiation blending combination, which comprises the following steps: shoving; exhausting; filling argon gas; doping; mitering; utilizing zone melting process monocrystalline silicon furnace electric control system to do the following operation in the metering growing procedure: setting positive, inversed movement for touching screen and coil heating moving order; moving positively for 1-90 s and moving inversely; repeating the movement to coincidence with the coil center and lower shaft or eccentric 1-50 mm. The invention reduces the radial and axial resistance heterogeneous problem of silicon single-crystal to improve the stability and reliability, which satisfies different needs of zone melting process monocrystalline silicon.

Description

technical field [0001] The invention relates to a production method of zone-melting silicon single crystal, in particular to a production method of zone-melting silicon single crystal which combines vapor phase pre-doping and neutron irradiation doping. technical background [0002] As we all know, the core of modern information technology and modern electronic technology is semiconductor technology, and semiconductor silicon single crystal material (according to statistics in 2000: semiconductor silicon single crystal material accounts for more than 95% of the world's semiconductor materials). In the production process of semiconductor silicon single crystal, the Czochralski method or zone melting method is mainly used for production. Among them, the silicon single crystal produced by the Czochralski method has thermal instability and reversibility of the resistivity due to the high oxygen content in the single crystal, which causes the Czochralski silicon single crystal to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B13/10C30B29/06
Inventor 沈浩平刘为钢高树良王聚安昝兴立王振东刘凤林赵喜君
Owner ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD