Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor device, electric solid-state device, etc., can solve the problems of complicated manufacturing process, position deviation of adhesive film and semiconductor chip, complicated manufacturing process, etc.

Inactive Publication Date: 2002-05-08
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The above-mentioned conventional semiconductor device manufacturing method for forming an adhesive-attached semiconductor chip has the problem of complicating the manufacturing process if the pre-slicing method is used.
In addition, in order to pr

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0059] use figure 1 (a) to (e) describe a method of manufacturing a semiconductor device according to Embodiment 1 of the present invention.

[0060] First, if figure 1 As shown in (a), on a film-shaped adhesive (adhesive film) 2 composed of a mixture of a thermosetting resin mainly composed of polyimide and a thermoplastic resin, a pre-assembled adhesive is bonded at a high temperature by a lamination method. Wafer (single-by-semiconductor chip) 1 divided by dicing. The portion of the wafer 1 to which the wafer 1 is not adhered is then removed. later as figure 1 As shown in (b), the adhesive film surface is laminated and attached to the dicing tape 3 made of, for example, vinyl chloride mounted on the wafer ring 4 at normal temperature. Thus, if figure 1 As shown in (c), the divided wafer (semiconductor chip) 1 is attached to the dicing tape 3 with an equal gap by means of the adhesive film 2 .

[0061] Then, if figure 1 As shown in (d), the adhesive film 2 expose...

Embodiment approach 2

[0066] use figure 1 (a)~(c) and figure 2 (a) to (d) describe a method of manufacturing a semiconductor device according to Embodiment 2 of the present invention.

[0067] Until the structure in which the semiconductor chips 1 are attached at equal intervals on the dicing tape 3 by means of the adhesive film 2 is basically the same as figure 1 Embodiment 1 shown in (a)-(c) is the same. That is, if figure 1 As shown in (a), wafers (semiconductor chips one by one) 1 divided by a pre-dicing method are bonded to a film-like adhesive (adhesive film) 2 by a lamination method or the like at a high temperature. Although the adhesive is a mixture of a polyimide-based thermosetting resin and a thermoplastic resin, in Embodiment 2, the thermoplastic resin has a polymethyl methacrylate structure and contains a compound that is decomposed by UV irradiation. A substance that is a component of a polyreaction.

[0068] The portion of the wafer 1 to which the wafer 1 is not adhered is ...

Embodiment approach 3

[0074] use figure 1 (a)~(c) and image 3 (a) to (c) illustrate a method of manufacturing a semiconductor device according to Embodiment 3 of the present invention.

[0075] Until the structure in which the semiconductor chips 1 are attached at equal intervals on the dicing tape 3 by means of the adhesive film 2 is basically the same as figure 1 Embodiment 1 shown in (a)-(c) is the same. That is, if figure 1 As shown in (a), wafers (semiconductor chips one by one) 1 divided by a pre-dicing method are bonded to a film-like adhesive (adhesive film) 2 by a lamination method or the like at a high temperature. The agent is a mixture of a polyimide-based thermosetting resin and a thermoplastic resin. In this embodiment 3, as the thermoplastic resin contained in the above-mentioned adhesive film 2, a side chain containing an active ethyl group is used. A substance that undergoes a cross-linking reaction when exposed to irradiation.

[0076] The portion of the wafer 1 to which ...

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Abstract

A semiconductor wafer on which elements have been formed is diced and a rear surface of the semiconductor wafer is ground by a dicing before grinding method to form discrete semiconductor chips. The discrete semiconductor chips are adhered to an adhesive film and then the surface of the adhesive film is removably affixed to a dicing tape. After this, any excess portions of the adhesive film disposed between the respective semiconductor chips are removed.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device applicable to a semiconductor chip manufacturing process in which a film-like die-bonding agent is attached to a semiconductor chip thinned and separated by a pre-slicing method. Background technique [0002] In order to simplify the process of pressure-mounting a semiconductor chip (chip component) on a metal frame or an organic substrate, a film-shaped die-bonding agent, that is, a semiconductor chip with an adhesive attached, is used on the inner surface of the semiconductor chip. chip. [0003] Currently, such adhesive-attached semiconductor chips are used as Figure 6 (a) ~ (e) shown in the process of manufacturing, that is, first, as Figure 6 As shown in (a), a film-like adhesive (adhesive film) 12 is bonded to the entire inner surface of the semiconductor wafer 11 after element formation is...

Claims

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Application Information

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IPC IPC(8): H01L21/52H01L21/20H01L21/301H01L21/68H01L21/762H01L21/78
CPCH01L21/6836H01L2224/274H01L2224/83191H01L24/27H01L2924/01082H01L2221/68327H01L21/76251H01L2924/01047H01L2924/01004H01L21/78H01L2224/83885H01L24/83H01L24/29H01L2924/01005H01L2924/01033H01L2924/01006H01L2924/01027H01L21/2007H01L2924/07802H01L2924/12042H01L2924/3512H01L2924/00
Inventor 田中一安
Owner KK TOSHIBA
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