Inductor for integrated circuit
A circuit and device technology, applied in the structural field of making inductors, can solve problems such as complex inductance and non-constant inductance
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2002-06-12
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The present invention relates to the enhancement of inductors for use in integrated circuit technology, and more particularly to structures and methods for fabricating inductors which do not substantially disrupt conventional semiconductor fabrication techniques. Background technique
[0002] Fabrication of on-chip inductors in combination with modern integrated circuits is highly desirable for many applications.
[0003] A major disadvantage of integrated inductors, especially on low-resistivity substrates, is the significant electric and magnetic field coupling between the inductive element and the conductive substrate. First, this will reduce the resulting inductance since any induced current in the substrate will result in a magnetic field oriented opposite to that of the inductor (Lenz's law). This magnetic field opposing the inductor's field causes the overall field to weaken as frequency increases, producing a varying eff...
Examples
Embodiment Construction
[0039] The microstrip transmission line of the present invention is adopted in the following several structures:
[0040] - Straight line microstrip
[0041] -Curve structure
[0042] - helical structure
[0043]The linear microstrip structure is shown in FIG. 1, in which the center conductor 16 as a signal transmission conductor is made of aluminum or copper. The two types of metallization techniques have different advantages for system optimization. Copper has a lower resistivity than aluminum, but aluminum wire can be made thicker without special treatment. It is desirable to increase the thickness of the center conductor to achieve lower overall resistance. The width of the center conductor is W, the thickness is d, and the distance between the center conductor and the metal plane 10 below it is h, which is an interlayer insulating material in the integrated chip substrate 10 . The integrated chip substrate preferably contains a multifunctional integrated circuit to w...