Semiconductor laser component element, optical fiber amplifier and photo communication system using said component element

A technology of semiconductor and laser components, applied in the direction of semiconductor lasers, lasers, wavelength division multiplexing systems, etc., can solve problems such as difficult optical amplification, large multiplex loss, and optical limitation

Inactive Publication Date: 2002-11-13
FURUKAWA ELECTRIC CO LTD
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Problems solved by technology

[0020] (2) When the central wavelength of the excitation laser light from the laser unit fluctuates, the wavelength band of the Raman gain also fluctuates in response to the fluctuation, and a mismatch occurs between the wavelengths of the signal light to be optically amplified, which is very difficult. Difficult to perform purposed light amplification
[0022] (3) In the Raman amplification method, when there is a fluctuation (swing) in the intensity of the excitation laser light, the Raman gain swings and it makes the signal-to-noise ratio (S / N ratio, signal-to-noise ratio) of the signal light decrease
Furthermore, when multiplexing is performed with a wavelength combining coupler, the multiplexing loss increases
Conversely, when the oscillation spectrum width is too narrow, it is difficult to reduce the polarization dependence of Raman gain, and the current-light output characteristics of the laser component will be distorted, and the light output from the laser component will be limited

Method used

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  • Semiconductor laser component element, optical fiber amplifier and photo communication system using said component element
  • Semiconductor laser component element, optical fiber amplifier and photo communication system using said component element
  • Semiconductor laser component element, optical fiber amplifier and photo communication system using said component element

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Embodiment

[0154] Formed on a substrate using GaInAsP-based semiconductor materials image 3 In the layer structure shown, cleavage makes the resonator length (L) 1300 μm, 1500 μm, forms a high reflection film with a reflectivity of 95% as the rear end surface 3B, and forms a reflectivity of 1.2% on the other cleaved surface Two types of laser elements 3 were fabricated using a low-reflection film as the front end face 3A. These laser elements respectively generate laser light with an oscillation spectrum having a center wavelength of 1480 nm.

[0155] The conditions of these laser elements are summarized in Table 2.

[0156] Laser element a

Laser component b

Resonator length (L: μm)

1300

1500

Reflectivity

(%)

rear face

95

95

Front face (R 1 )

0.1

0.1

Center wavelength of oscillation spectrum (nm)

1480

1480

[0157] Next, the front end faces 3A of the above-m...

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Abstract

Disclosed is a semiconductor laser module which is advantageous as a pumping source for Raman amplification because of its high optical output and excellent wavelength stability. The module comprises a Fabry-Pérot semiconductor laser device to which a fiber Bragg grating having a wavelength selectivity and showing a specific reflectivity with respect to a specific wavelength is optically coupled, wherein given that a cavity length of the semiconductor laser device is L ( mu m), a reflection bandwidth of the fiber Bragg grating is DELTA lambda (nm) and a reflectivity of said front facet is R1 (%) and a peak reflectivity of said optical feedback part is R2 (%), following equations are satisfied among L, R1 and R2 1000 mu m ≤ L ≤ 3500 mu m, 0.01% ≤ R1 + c<2>R2 ≤ 4% and R1 / R2 ≤ 0.8 where c represents a coupling efficiency between the semiconductor laser device and the fiber Bragg grating. It is preferable that 0.2 nm ≤ DELTA lambda ≤ 3 nm should be satisfied. <IMAGE>

Description

technical field [0001] The invention relates to a semiconductor laser assembly designed as an excitation light source of an optical communication system. In more detail, it involves a Fabry-Perot type semiconductor laser element and a fiber Bragg grating (Fiber Brag Grating, FBG), a dielectric multilayer filter, a distributed Bragg reflector (DBR ) and other optical feedback components to form a composite resonator type semiconductor laser component, which can be used as a laser component that has the characteristics of oscillating a high-output excitation laser, has good optical stability and has the ability to oscillate an excitation laser It is a laser component with unique characteristics and can suppress distortion, for example, it is suitable for the excitation light source used in the wavelength division multiplexing communication method of the Raman amplification method. Background technique [0002] As an optical communication system for transmitting a plurality of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/022H01S5/14
CPCH01S5/0287H01S5/1039H01S5/146H01S5/227H01S5/02251
Inventor 吉田顺自筑地直树爱清武小柳谕
Owner FURUKAWA ELECTRIC CO LTD
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