Technology for preparing electrostatic-type full-light switch for miniature machine
A technology of an all-optical switch and a manufacturing method, applied in the field of optoelectronics, can solve the problems of increased volume and cost, increased optical exchange pressure, large volume, etc., and achieves the effects of easy mass production, low manufacturing cost, and small volume
Inactive Publication Date: 2003-01-15
信息产业部电子第十三研究所
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Problems solved by technology
Traditional optoelectronic-optical (OEO) optical switches exhibit the following disadvantages: low speed, bulky, high cost
The all-optical network of fiber optic communication mainly consists of two parts, namely optical transmission and optical switching. At present, due to the use of wavelength division multiplexing (WDM) technology, the optical transmission capacity has been greatly improved, so this has increased the pressure on optical switching. At present, The core of optical switching is the optical-electrical-optical switch (OEO switch). Its switching process needs to undergo O / E and E / O conversion. Limited by the speed of optical transmission, the current exchange rate is close to the limit speed of electrons. As the size of the switching module increases and the communication rate increases, the volume and cost of the OEO switch will rise linearly
Method used
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Embodiment Construction
[0021] refer to figure 1 , figure 2 , the present invention takes the following steps:
[0022] (1) utilize a commercially available general-purpose diffusion furnace to diffuse a layer of concentrated boron layer 14 on an N-type monocrystalline silicon 1 substrate. The thickness of the embodiment diffused concentrated boron layer 14 is 100,000 Å, and the concentrated boron layer 14 is used as an EPW wet etching process. self-stop layer, and at the same time form a P between the boron-rich layer 14 and the N-type single crystal ++ The n-junction serves as electrical isolation between the fixed-tooth drive electrode 2 and the movable-tooth drive electrode 5 .
[0023] (2) Coat one layer of AZ1450 type photoresist 15 on the concentrated boron layer 14, the thickness of the embodiment coating photoresist 15 is 8000 Å, and bake 15 minutes at temperature 100 ℃ with oven.
[0024] (3) Place an electrode mask plate on the photoresist 15, expose it to the position on a conventiona...
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A technology for preparing an electrostatic micromechanical light switch features that a large scale integration technique is used to prepare the fixed teeth, moving teeth, their drive electrodes, folded santilever, triangular balance beam, intermediate beam, silicon micromirror, vertical groove, and V-shaped groove of light switch on N-type monocrystal substrate. Under the action of electrostatic force, the silicon micromirror can move in optical fibre for blocking or reflecting light in optical fibre, so realizing on or off action. Its advantages are low cost, high reliability, small size, light weight and low energy consumption.
Description
technical field [0001] The invention relates to a method for manufacturing an electrostatic micromechanical all-optical switch in the field of optoelectronic technology, and is especially suitable for the manufacture of an optical switch device in a high-speed and large-scale all-optical fiber communication network. Background technique [0002] Modern optical fiber communication is developing in the direction of all-optical communication, and the development trend of high speed, broadband, and large capacity has an increasing demand and higher requirements for optical switches. Traditional optoelectronic-optical (OEO) optical switches exhibit the following disadvantages: low speed, large size, and high cost. The all-optical network of fiber optic communication mainly consists of two parts, namely optical transmission and optical switching. At present, due to the use of wavelength division multiplexing (WDM) technology, the optical transmission capacity has been greatly impr...
Claims
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Login to View More IPC IPC(8): G02B6/35G03F7/00
Inventor 徐永青杨拥军梁春广赵彦军
Owner 信息产业部电子第十三研究所