Nitride ROM and its manufacture

Abstract

In the manufacture of nitride read only memory (NROM), one or several isolating layer to cover silicon oxide / silicon nitride / silicon oxide structure and grid and formed while manufacturing NROM and SiNx spacer to protect NROM unit is formed. Owing to that the direct contact between the SiNx spacer and the grid will higher NROM module threshold voltage, the present invention utilizes one or several isolating layer of SiOy to separate the SiNx spacer and the NROM module. This can protect the NROM module while avoiding the side effect of SiNx spacer and leakage current between modules.

Description

field of invention [0001] The invention relates to a nitride read only memory (NitrideReadOnlyMemory; NROM) and a manufacturing method thereof, in particular to a manufacturing method of forming a spacer (Spacer) with an isolation function on the NROM. Background of the invention [0002] Please refer to figure 1 , which is a cross-sectional view of the structure of a conventional NROM cell. The formation process of this NROM unit is as follows: first, utilize photolithography and such as wet etching to define an active area (ActiveArea) on the substrate 100, and then use ion implantation (IonImplantation) to implant phosphorus ions (P - ), forming a channel (Channel) 104. Subsequently, the first oxide layer 108 and the nitride layer 110 are sequentially deposited on the substrate 100, and then oxidized and deposited to form the second oxide layer 112, wherein the nitride layer 110 is interposed between the first oxide layer 108 and the second oxide layer 112 between. Th...

AI Technical Summary

Problems solved by technology

[0005] However, in the future semiconductor manufacturing process, NROM components are usually irradiated by ultraviolet rays (Ultra-VioletLight) or invaded by plasma ions, which excites the atoms in the NROM components and makes the atoms in the components become charged ions. Therefore, it will lead to an increase in the amount of charge in the NROM component, which will affect the electrical stability of the component and cause damage to the component

[0006] Therefore, in the above-mentioned existing NROM manufacturing method, the formed NROM unit cannot block the penetration of ultraviolet rays or plasma ions, thus increasing the amount of charge in the component, causing the electrical properties of the component to be in an unstable state, and causing product failure. Reduced pass rate

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