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Semiconductor lighting device and making method thereof

A technology for light-emitting devices and semiconductors, which can be applied to semiconductor devices, semiconductor lasers, laser parts, etc., and can solve the problems of difficulties and cracks in nitride semiconductor light-emitting devices.

Inactive Publication Date: 2003-05-21
SHARP KK +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] As described above, the method of forming the nitride semiconductor layer 92A within the opening by epitaxial growth prevents cracks from being generated at the central portion thereof, but there is a possibility of causing cracks at the edge portion of the nitride semiconductor layer 92A due to local distortion applied to the thick portion. danger
[0011] When the substrate is composed of a material having a thermal expansion coefficient smaller than that of a nitride semiconductor material, such as Si, it is difficult to produce a nitride semiconductor light emitting device having a long lifetime and high luminance emission and preventing crack generation

Method used

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  • Semiconductor lighting device and making method thereof
  • Semiconductor lighting device and making method thereof
  • Semiconductor lighting device and making method thereof

Examples

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Embodiment 1

[0040] FIG. 1 is a schematic cross-sectional view of a nitride semiconductor light emitting device 100 according to a first embodiment of the present invention. figure 2 is a schematic plan view of the nitride semiconductor light emitting device 100 . The nitride semiconductor light emitting device 100 includes a Si substrate 11 having a (111) plane and an insulating layer 31 provided on the Si substrate 11 . This insulating layer 31 has an appropriate thickness and covers the surface of the Si substrate 11 except the portion where the nitride is to be grown. The insulating layer 31 contains, for example, SiO 2 .

[0041] The insulating layer 31 has a plurality of openings 32 at positions other than at least one of its four corners. Within each opening 32, the columnar multilayer structure 20 is formed by growing a nitride semiconductor material. The opening 32 penetrates the insulating layer 31 to expose the surface of the Si substrate 11 . The openings 32 are square an...

Embodiment 2

[0085] Figure 7 is a schematic cross-sectional view of a nitride semiconductor light emitting device 200 according to a second embodiment of the present invention. Figure 8 is a schematic perspective view of an assembly of a Si substrate 11 and a mask layer 41A disposed thereon. Here, the same elements as those already described in FIGS. 1 to 6 of the first embodiment have the same reference numerals, and detailed descriptions of these elements are omitted.

[0086] The nitride semiconductor light emitting device 200 differs from the nitride semiconductor light emitting device 100 mainly in the following points. Mask opening 42A has a larger width 43A of 200 μm. Each columnar multilayer structure 20 is covered by a transparent electrode 16A, a bonding electrode 17A and a back electrode 19 . One chip of the nitride semiconductor light emitting device 200 obtained by dicing includes a columnar multilayer structure 20 .

[0087] refer to Figure 7 A nitride semiconductor l...

Embodiment 3

[0106] Figure 9 is a schematic cross-sectional view of a nitride semiconductor light emitting device 300 according to a third embodiment of the present invention. Figure 10 It is a three-dimensional schematic diagram of a layer of Si substrate and a multi-layer columnar multi-layer structure 20B assembly arranged thereon. Here, the same elements as those already described in FIGS. 1 to 6 of the first embodiment have the same reference numerals, and detailed descriptions of these elements are omitted.

[0107] The nitride semiconductor light emitting device 300 includes an AlN layer 121 disposed on the Si substrate 11 . Si substrate 11 has a (111) plane.

[0108] Columnar multilayer structure 20B includes AlN layer 121 covering the surface of Si substrate 11 . The columnar multilayer structure 20B also includes a first capping layer 122 containing Si-doped n-GaN for covering the entire surface of the AlN layer 121, and a capping layer 122 containing In for covering a part ...

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Abstract

A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 mum or less.

Description

technical field [0001] The present invention relates to a method of producing a semiconductor light emitting device, in particular to a method of producing a semiconductor light emitting device including a nitride semiconductor layer as a light emitting layer on a silicon substrate, and producing a semiconductor light emitting device using the method. Background technique [0002] Semiconductor light-emitting devices using nitride semiconductor materials such as GaN, InN, AlN or their mixed crystals generally include a layer made of, for example, In on a sapphire substrate as a light-emitting layer. x Ga 1-x A nitride semiconductor layer composed of N crystals. [0003] Recently, silicon (Si) substrates that are cheaper than sapphire substrates and have larger areas have been produced. Nitride semiconductor light emitting devices can reduce production costs by using such Si substrates instead of sapphire substrates. [0004] Nitride semiconductor light emitting devices pr...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/16H01L33/32H01L33/34H01L33/42H01L33/44
CPCH01L33/08
Inventor 小出典克山本淳次堂北刚泽木宣彦本田善央黑岩洋佑山口雅史
Owner SHARP KK
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