Deposited thin film and their use in separation and sarcrificial layer applications

Abstract

This invention uses large surface to volume ratio materials for separation, release layer, and sacrificial material applications. The invention outlines the material concept, application designs, and fabrication methodologies. The invention is demonstrated using deposited column / void network materials as examples of large surface to volume ratio materials. In a number of the specific applications discussed, it is shown that it is advantageous to create structures on a laminate on a mother substrate and then, using the separation layer material approach, to separate this laminate from the mother substrate using the present separation scheme. It is also shown that the present materials have excellent release layer utility. In a number of applications it is also shown how the approach can be used to uniquely form cavities, channels, air-gaps, and related structures in or on various substrates. Further, it is demonstrated that it also can be possible and advantageous to combine the schemes for cavity formation with the scheme for laminate separation.

Description

technical field [0001] This invention relates to deposited semiconductor and dielectric thin films. The invention also relates to the use of these films in release layer, release layer and sacrificial layer applications. Separation and release layers applications for these films include separation and release layers that function as separation materials and structures in manufacturing processes in areas such as microelectronics, displays, solar cells, sensors, detectors, optoelectronics, biotechnology, and micro Electromechanical (MEM) devices and systems. Sacrificial layer applications for these films include sacrificial membranes that function to create void regions for applications such as trenches, tubes, "air gaps" and microfluidics, separation / sorting structures, fuel cells, media, acoustic structures, and optical structure. Background technique [0002] The method of separating layers is used to physically separate a system of materials into at least two distinct s...

AI Technical Summary

Problems solved by technology

However, it requires anodic or direct (melt) bonding and has the critical defect of requiring top and bottom alignment

Difficult to manufacture small trench sizes due to misalignment of the two substrates during the bonding process and formation of microvoids at the bonding interface

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