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Process for preparing strip type array carbon nano tube

A carbon nanotube and strip technology is applied in the field of preparation of strip-type array carbon nanotubes and achieves the effects of low cost, high resolution and uniform structure

Inactive Publication Date: 2003-08-06
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, using the current method, the carbon nanotubes are only partially grown in or outside the pattern area, so only two-dimensional carbon nanotube arrays or patterns can be constructed (Xie Sishen, Li Wenzhi, Chinese Patent 96120461.3, publication number: CN1165209A) , and the preparation of three-dimensional carbon nanotube arrays has not been reported in the literature and patent applications

Method used

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  • Process for preparing strip type array carbon nano tube
  • Process for preparing strip type array carbon nano tube
  • Process for preparing strip type array carbon nano tube

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Embodiment 1 With a width of 18.6 micron strip pattern mask, on a clean quartz glass substrate (1 * 2 cm), vacuum (pressure is 10 -3 Pascal) vapor-deposited a metal aluminum film with a thickness of 250 nm (such as figure 1 shown), the quartz sheet with a striped aluminum film pattern was bombarded with plasma in ammonia gas for 10 minutes, and then put into a reactor consisting of a quartz tube and a tube electric furnace, at a rate of 40 ml per minute Flow into the mixed gas of equal volume of hydrogen and argon, then raise the temperature of the electric furnace to 950 ° C, after constant temperature, add 0.5 g of iron phthalocyanine, crack at high temperature for 5 minutes, close the electric furnace, continue ventilation to make it cool to room temperature (20 ℃), take out the quartz plate, and observe it under a scanning electron microscope, you can get the following figure 2 In the three-dimensional carbon nanotube array in strip-like structure shown, the strip...

Embodiment 2

[0024] Example 2 According to the preparation method of Example 1, except that the strip width of the mask was reduced to 8.5 and 6.5 microns, two three-dimensional carbon nanotube arrays with a striped structure of 8.5 and 6.5 microns in width were prepared. The carbon nanotubes inside the band region are 1.4 microns longer than those outside the region. (Such as image 3 shown)

Embodiment 3

[0025] Example 3 According to the preparation method of Example 1, only the strip widths of the mask are changed to 3.0, 2.0, 9.3, 1.3, and 1.0 microns respectively, and the obtained widths are 3.0, 2.0, 9.3, 1.3, and 1.0 microns. A three-dimensional carbon nanotube array in a strip-like structure, and the carbon nanotubes in the strip region are 1.4 microns longer than those outside the region. (Such as Figure 4 shown)

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Abstract

The method for preparing strip 3-D array carbon nano tube includes the following steps: using a mask with pattern formed from strip and vacuum evaporating a metal aluminium film layer whose thicknessis 100-500 nanometers on a clean substrate, using plasma to bombard with substrate with evaporated aluminium film pattern in ammonia gas for 5-20 min to make pretreatment, placing said substrate intoreactor formed from quartz tube and tubular electric furnace, introducing mixed gas of hydrogen gas and argon gas, then rising temp. of electric furnace to 850-1000 deg.C, and retaining constant temp., adding phthalocyanine iron, high-temp. cracking for 5-30 min. ,then introducing air and cooling so as to obtain the invented product with important application value for constructing field emissionplane display, vacuum microelectronic source and new-type functional microelectronic device, etc.

Description

Technical field: [0001] The invention relates to a method for preparing strip-type array carbon nanotubes. Background technique: [0002] The selective positioning and construction of arrayed carbon nanotubes has particularly important basic and applied research values, especially in the fields of field emission flat panel displays, vacuum microelectronic sources, and new functional nanodevices (Fan, S.; Chapline, M.G.; Franklin, N.R.; Tombler, T.W.; Cassell, A.M.; Dai, H. Science 1999, 283, 512.). All of these applications require a special fabrication method by which arrays or patterns of carbon nanotubes can be produced with a uniform configuration or a periodic arrangement. Early attempts to design for these applications focused on post-synthesis handling of carbon nanotubes. For example, a partial array of carbon nanotubes can be obtained by shearing a composite material of carbon nanotubes and a polymer resin or filtering a suspension of carbon nanotubes in ethanol w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02
Inventor 刘云圻王贤保胡平安于贵肖恺朱道本
Owner INST OF CHEM CHINESE ACAD OF SCI
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