Semiconductor substrate cleaning composition

Abstract

The patent provides a liquid composition which is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it. The washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate.

Description

technical field [0001] The present invention relates to a cleaning solution, in particular to a cleaning solution for removing particle contamination adsorbed on a hydrophobic semiconductor substrate such as a low dielectric constant (Low-K) film. [0002] In addition, the present invention particularly relates to a cleaning solution used for cleaning a substrate after chemical mechanical polishing (hereinafter referred to as CMP) in a semiconductor manufacturing process. Background technique [0003] With the high integration of integrated circuits, trace impurities have a great impact on the performance and yield of components, so strict pollution control is required. That is, strict control of the particles and metals of the substrate is required, and various cleaning solutions are used in each process of semiconductor manufacturing. [0004] Generally speaking, as substrate cleaning solutions for semiconductors, there are sulfuric acid-hydrogen peroxide, ammonia-hydroge...

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Problems solved by technology

However, for these new materials, the previous cleaning solution cannot be used without treatment, and it cannot be completely cleaned.

In addition, not only in the planarization of the interlayer insulating film but also in the planarization of Cu wiring which is another application field of CMP, the above-mentioned low electric constant film sometimes leaks out due to excessive polishing, and in this case, Existing cleaning solutions cannot clean, so cleaning solutions that are effective for these semiconductor substrates are expected