Semiconductor substrate cleaning composition

A technology of composition and cleaning solution, which is applied in the field of cleaning solution, can solve the problems that the cleaning solution cannot be cleaned or completely cleaned, and achieve the effect of inhibiting agglutination

Inactive Publication Date: 2003-09-03
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for these new materials, the previous cleaning solution cannot be used without treatment, and it cannot be completely cleaned.
In addition, not only in the planarization of the interlayer insulating film but also in the planarization of Cu wiring which is another application field of CMP, the above-mentioned low electric constant film sometimes leaks out due to excessive polishing, and in this case, Existing cleaning solutions cannot clean, so cleaning solutions that are effective for these semiconductor substrates are expected

Method used

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Examples

Experimental program
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Embodiment

[0038] Hereinafter, the present invention will be described in detail by showing examples of the present invention together with comparative examples, but the present invention should not be limited to these examples.

[0039] Using water as a solvent, cleaning liquid compositions having the compositions shown in Table 1, Table 2 and Table 3 were prepared. The measurement of the contact angle, the evaluation of the ability to remove particles and the ability to remove metal impurities were performed.

[0040] (Contact angle 1 to hydrophobic substrate surface: bare silicon)

[0041] The contact angle when dropped on the bare silicon substrate surface was measured with a contact angle measuring device, and the wettability to the substrate was evaluated. Table 1 shows the results.

[0042] Polycarboxylic acid (weight%)

[0043] ポリテイ-A-550: Carboxylic acid polymer (manufactured by Kao)

[0044] デモ-ルAS: Condensate of ammonium naphthalenesulfonate and formaldehyde (man...

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PUM

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Abstract

The patent provides a liquid composition which is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it. The washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate.

Description

technical field [0001] The present invention relates to a cleaning solution, in particular to a cleaning solution for removing particle contamination adsorbed on a hydrophobic semiconductor substrate such as a low dielectric constant (Low-K) film. [0002] In addition, the present invention particularly relates to a cleaning solution used for cleaning a substrate after chemical mechanical polishing (hereinafter referred to as CMP) in a semiconductor manufacturing process. Background technique [0003] With the high integration of integrated circuits, trace impurities have a great impact on the performance and yield of components, so strict pollution control is required. That is, strict control of the particles and metals of the substrate is required, and various cleaning solutions are used in each process of semiconductor manufacturing. [0004] Generally speaking, as substrate cleaning solutions for semiconductors, there are sulfuric acid-hydrogen peroxide, ammonia-hydroge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/00C11D1/22C11D1/24C11D1/34C11D1/72C11D3/20C11D11/00
CPCC11D1/22C11D3/2082C11D1/24C11D1/345C11D11/0047C11D3/2086C11D1/004C11D1/72C11D3/37
Inventor 阿部优美子石川典夫青木秀充富盛浩昭笠间佳子
Owner RENESAS ELECTRONICS CORP
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