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Method for preparing high photoconductive gain carbon nitride film

A technology for photoconductive gain and thin film preparation, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problem of no superhard results

Inactive Publication Date: 2003-09-24
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The carbon nitride films obtained by most researchers have an amorphous structure, and a few studies have obtained films with microparticles of β-C 3 N 4 , none of these materials had the superhard results expected by the Harvard academics

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] A Kaufmann ion beam source ion beam is used, nitrogen is used as the working gas, and the beam intensity is 30mA / cm 2 , the ion beam current energy is 800eV, the accelerating voltage is 100V, the angle between the film substrate 3 and the hammer line is 8 degrees, and the working pressure is 2×10 -2 Pa, the film substrate is heated to 100°C by a heater, and the deposition time is 80 minutes. As-deposited films were tested with a photoconductive gain of 10 3 .

Embodiment 2

[0016] A Kaufmann ion beam source ion beam is used, nitrogen is used as the working gas, and the beam intensity of the ion beam is 50mA / cm 2 , the ion beam current energy is 500eV, the accelerating voltage is 300V, the angle between the film substrate and the hammer line is 10 degrees, and the working pressure is 4×10 -2 Pa, the film substrate is heated to 300°C by a heater, and the deposition time is 60 minutes. As-deposited films were tested with a photoconductive gain of 10 4 .

Embodiment 3

[0018] A Kaufmann ion beam source ion beam is used, nitrogen is used as the working gas, and the beam current intensity of the ion beam is 80mA / cm 2 , the ion beam current energy is 300eV, the accelerating voltage is 500V thin film, the angle between the substrate and the hammer line is 12 degrees, and the working pressure is 6×10 -2 Pa, the film substrate is heated to 500°C by a heater, and the deposition time is 120 minutes. As-deposited films were tested with a photoconductive gain of 10 5 .

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Abstract

The present invention adopts ion beam sputtering process to prepare carbon nitride film. It uses high-purity graphite as target material, uses the high-purity nitrogen gas as working gas of kaufman ion beam source, and its working gas pressure is 2-6X10 to the minus second. Said invention only uses the nitrogen gas as reactino and sputtering gas, and the film is aloof from direct bambardnment of concentrated nitrogen ion beam, so that the density of dangling bond compound defect can be reduced, and the possivation process of the hydrogen gas can be saved, under the AM1.5, 100m W / sq.cm standard light intensity the ratio value of photoconduction grain and dark conduction of the obtained carbon nitride film can be up to 10 to the sixth power.

Description

technical field [0001] The invention relates to a thin film preparation method, in particular to a high photoconductive gain carbon nitride thin film preparation method, which belongs to the field of semiconductor materials. Background technique [0002] In the 1980s, scholars from Harvard University theoretically predicted the carbon nitride film of β structure (β-C 3 N 4 ) due to its short C-N covalent bonds, the material may have even higher hardness than diamond. Scientists around the world are trying to find a way to synthesize this superhard new material, but almost none of them have succeeded. The carbon nitride films obtained by most researchers have an amorphous structure, and a few studies have obtained films with microparticles of β-C 3 N 4 , none of these materials had the ultrahard results expected by the Harvard academics. However, in another field of application, in the field of optoelectronic materials and device applications, it has been found that amor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/34
Inventor 周之斌崔容强蔡燕晖刘梅苍
Owner SHANGHAI JIAO TONG UNIV