Mfg. method of semiconductor device
A semiconductor and device technology, applied in the field of manufacturing semiconductor devices, can solve problems such as inability to obtain signal voltage, difficulty in polarization conversion of ferroelectric film, etc.
Inactive Publication Date: 2003-10-08
NEC ELECTRONICS CORP
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Problems solved by technology
[0007] Therefore, in the prior art of manufacturing a ferroelectric film or a capacitor, since the amount of switchable polarization of the ferroelectric film is small, when a capacitor manufactured by such a manufacturing technique is applied to a semiconductor device, the In the current semiconductor device, the semiconductor device is required to be driven at a low voltage, and at the low voltage, the polarization switching of the ferroelectric film becomes difficult, causing a problem of a necessary characteristic, that is, a necessary signal cannot be obtained Voltage
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[0031] Hereinafter, embodiments of the present invention will be explained with reference to the drawings. This embodiment is an example where the present invention is applied to a so-called shadow RAM in which a ferroelectric capacitor is connected to a static RAM formed of a MOS transistor. In this shadow RAM, for example, as in image 3 Shown its circuit diagram, each of a pair of cascaded N-channel MOS transistors Q0, Q1 and a pair of cascaded P-channel MOS transistors Q2, Q3 is connected between the power supply VCC and ground, and the two The pair is cross-connected to its N-channel MOS transistors Q4, Q5 connection nodes NO, N1 respectively, and N-channel MOS transistors Q4, Q5 are respectively connected to the word line WL, bit line BLN, BLT to which these transistors are connected. Furthermore, ferroelectric capacitors F0 , F1 are connected to the connecting nodes N0 , N1 , and furthermore a plate rail PL is connected thereto. Although a detailed description of the ...
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The present invention relates to a method of manufacturing a semiconductor device. A lower electrode is formed on an insulating film on the surface of a substrate, and a ferroelectric film is formed on the lower electrode at a temperature equal to or lower than 450 degrees Celsius, or at a temperature equal to or lower than the Curie temperature of the ferroelectric film . Thereafter, an upper electrode is formed on the ferroelectric film, and after the upper electrode is formed, the heat treatment is performed at a temperature higher than the deposition temperature or the Curie temperature. Thereby forming a ferroelectric film with a specific crystal orientation, and when heat treatment is applied at a temperature higher than the deposition temperature or the Curie temperature to convert from the previous to the paraelectric phase, the ferroelectric film can be obtained without changing the crystal structure phase, and thus a ferroelectric film well aligned in the natural polarization direction of the corresponding domain can be obtained.
Description
technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device such as a semiconductor memory device equipped with a capacitor (capacitor) having a ferroelectric film. Background technique [0002] In recent semiconductor devices, especially in semiconductor memory devices equipped with transistors and capacitors, it has been proposed to use ferroelectric films for dielectrics of capacitors. Heretofore, in the method of manufacturing a capacitor equipped with such a ferroelectric film, after forming a lower layer electrode on an insulating film on one surface of a semiconductor substrate, a ferroelectric film is formed thereon, and an upper layer electrode is further formed thereon. electrodes, and thereafter these upper electrodes, ferroelectric films and lower electrodes are formed into a predetermined pattern. In addition, in its manufacturing method, as ...
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IPC IPC(8): C23C16/40H01L21/02H01L21/314H01L21/316H10B10/00H10B20/00H10B69/00
CPCH01L21/02197H01L21/02271H01L21/02318H01L21/02356H01L21/3105H01L28/55H10B10/00H10B10/12H10B53/30H10B53/00H01L27/105H01L21/31691
Inventor 竹村浩一
Owner NEC ELECTRONICS CORP