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Method for producing semiconductor

A manufacturing method and semiconductor technology, applied in the field of film manufacturing, can solve the problems of easy cracks, increased pressure, high ductility, etc., and achieve the effect of improving reliability and production yield

Inactive Publication Date: 2004-01-21
PANASONIC CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the uppermost layer of the lower electrode is a noble metal, since the exposed noble metal film cannot use chemical action, the mechanical pressure is enhanced, and because the noble metal film generally has higher ductility, cracks are more likely to occur
[0012] In the above conventional examples, the noble metal film was described, but the same problem occurs in a film containing a noble metal such as a noble metal oxide film.

Method used

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  • Method for producing semiconductor
  • Method for producing semiconductor
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no. 2 Embodiment

[0048] A method of manufacturing a semiconductor device according to a second embodiment of the present invention will be described with reference to the process sectional views shown in FIGS. 2 and 3 .

[0049] Figure 2A The process before ~C and Figure 1A ~C is the same, and the explanation is omitted here.

[0050] Then, if Figure 2D As shown, in the range where the noble metal-containing film is not exposed, the level difference is alleviated and planarized using chemical mechanical polishing. The abrasive used at this time is a general insulating film abrasive containing abrasive grains such as alumina, silica, ceria, and the like.

[0051] Then, as shown in FIG. 3 , the insulating film 207 is removed by similar etching until the surface of the noble metal-containing film 206 is exposed.

[0052] Here, when the contact plug 203 is made of tungsten (W), for example, the contact plug is buried by a tungsten chemical vapor deposition (W-CVD) method, and a concave port...

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Abstract

The method for manufacturing the semiconductor device includes steps of forming an insulating film (107) so as to cover the patterned film (106) containing the noble metal, and polishing the film (107) by chemimechanical polishing. Thus, the film containing the noble metal can be buried and formed without remaining the film on the film containing the noble metal without generating the scratch, the deformation of the film containing the noble metal and the separation.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of embedding a film containing a noble metal in an insulating film. Background technique [0002] refer to Figure 5A -D is a process cross-sectional view of the first conventional example, illustrating a conventional method of embedding a metal film in a semiconductor device. [0003] Such as Figure 5A As shown, an insulating film 402 is formed on a semiconductor substrate 401 . Then, if Figure 5B As shown, a resist pattern (not shown) is formed on a desired position of the insulating film 402, and a hole 403 is formed in the insulating film by dry etching using the resist pattern as a mask. Then if Figure 5C As shown, a metal film 404 is formed on the entire surface by sputtering, CVD (Chemical Vapor Deposition) or plating. Then if Figure 5D As shown, the metal film is polished by chemical mechanical polishing (hereinafter abb...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L28/60H01L28/55H01L21/304
Inventor 夏目进也三河巧十代勇治
Owner PANASONIC CORP