Method for eliminatnig defects on wafer by high energy full ion implantation

Abstract

The present invention utilizes total ion implanting of high-energy method to implant ion to deep layer of silicon wafer so that the surface impurity defects can be entirely lowered with their depth to spread them to damage area deep under the silicon wafer surface in order to decrease the impurity defects and differential raws in component forming zone at the surface of the silicon wafer.

Description

【Technical field】 [0001] The present invention relates to a method (gettering) for semiconductor silicon wafer manufacturing process, in particular to a method (gettering) for eliminating surface defects of silicon wafers by using a very high energy comprehensive ion implantation method (VHEBI). defect method. 【Background technique】 [0002] Wafer processing (Modification) refers to the process of manufacturing silicon single crystal rods into silicon wafers (Wafer). The manufacturing steps included in the wafer forming process vary depending on different wafer manufacturers, mainly including Orientation, Slicing, Edge Contouring, crystal plane A series of processes such as lapping, chemical etching, gettering, and the cleaning process (cleaning) required between each step can finally become a piece of wafer. [0003] Generally, silicon wafers grown by the silicon crystal growth (CZ) method, defects caused by impurities in the growth environment and thermal stress are left...

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Problems solved by technology

[0005] However, no matter which method is used above, the traditional defect removal method can only reduce part of the impurity depth, and cannot completely reduce all metal impurity defects on the silicon wafer, so that there are still some impurity defects on the surface of the silicon wafer. , will make the components of the integrated circuit fabricated on the silicon wafer be affected by impurities and reduce the yield and electrical quality of the components

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