Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for etching surface material with induced chemical reaction by focused electron beam on surface

A technology of focused electron beam and chemical reaction, applied in photosensitive material processing, originals for photomechanical processing, photoengraving process of pattern surface, etc., can solve problems such as transparency defects, lack of absorber materials, opacity, etc.

Inactive Publication Date: 2010-04-28
NAWOTEC +1
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] 1) Absence of absorber material in areas where there should be absorber, - transparent defects - and
[0006] 2) Presence of absorbent material in areas where there should be no absorbent, -opaque defect-
[0012] Currently, focused electron beams are only used to repair transparency defects by locally adding absorber materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for etching surface material with induced chemical reaction by focused electron beam on surface
  • Method for etching surface material with induced chemical reaction by focused electron beam on surface
  • Method for etching surface material with induced chemical reaction by focused electron beam on surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] figure 1 Shown is a schematic assembly diagram of a mask repair system 10 according to the method of the present invention, having a known molecular beam delivery system, hereinafter referred to as gas delivery system 12; a known electron beam system 14; a known photon beam system, hereinafter referred to as the laser beam system 16; and the computer control system 18 for triggering operations in due time and coordinating the beams - molecular beams, photon beams and electron beams.

[0046] The gas supply system 12 comprises a reservoir 20 for liquid or solid precursor - Peltier cooled -; a feed line 22 for a gaseous precursor; a feed line 24 for compressed air; a valve control 26, a pressure gauge 28 and a Temperature control 30 in reservoir 20 . Connection Valve control 26, pressure gauge 28 and temperature gauge are connected to computer control system 18 by means of a CAN open bus.

[0047] The reservoir 20 is connected to a nozzle header 38 by means of a feed pi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reactionproduct is removed from the material surface - irradiation and removal step.

Description

technical field [0001] This application relates to methods for etching materials at surfaces using a focused electron beam to induce chemical reactions. In general, the present invention relates to focused electron beam-induced chemical reactions and their use in materials processing. In particular, the invention relates to the removal of material with high spatial resolution using electron beam induced etching. This application also relates to repairing photomasks and altering integrated circuits and other devices at the nanoscale. Background technique [0002] Several direct-write techniques have been developed to modify materials at the nanoscale, most of which are based on focused particle or photon beams. Examples of these techniques applied in the semiconductor industry include repairing photomasks and altering integrated circuits. In most of these applications, the technology is required to remove and add material with submicron precision. For additive materials, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/36H01L21/027C23F4/00G03F1/00H01J37/305H01L21/302H01L21/311
CPCH01J37/3056H01L21/31122H01J2237/3174H01L21/31105H01J2237/31744G03F1/74
Inventor 汉斯·W·P·库普斯克劳斯·艾丁格
Owner NAWOTEC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com