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Method of making thin film transistor

A technology for thin film transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve problems such as deterioration, inability to provide sufficient hydrogenation effect, and unstable component characteristics.

Inactive Publication Date: 2004-08-18
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As shown in the figure, the existing technology is to perform hydrogenation after the drain 41 and source 42 of the substrate 40 are completed, but this method cannot provide sufficient hydrogenation effect to repair the Self-Alignmentnt components
This will cause instability and deterioration of device characteristics

Method used

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  • Method of making thin film transistor
  • Method of making thin film transistor
  • Method of making thin film transistor

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Embodiment Construction

[0013] Please refer to FIGS. 1(a) and (b), which respectively show schematic diagrams of the high temperature and hydrogenation process of a thin film transistor manufacturing method according to a preferred embodiment of the present invention. As shown in the figure, the manufacturing method of the thin film transistor of the present invention is used in the manufacture of a liquid crystal display panel (LCD Panel), which includes the following steps: forming a drain electrode 11 and a source electrode 12 metal layers on a substrate 10 (step 1 ), wherein the substrate 10 is preferably a glass substrate; a silicon oxide layer (SiOx) 13 is covered on the metal layer of the drain electrode 11 and the source electrode 12 (step 2); on the silicon oxide layer 13 Perform a high temperature process (step 3), the high temperature process is preferably a rapid high temperature process (Rapid Thermal Process, RTP); a silicon nitride layer (SiNx) 14 is covered on the silicon oxide layer 13 (...

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Abstract

The invention provides a method for making thin-film transistor comprising the steps of, forming a base and source sheet metal on a substrate, coating a silicon oxide layer on the base and source sheet metal, performing a high temperature process on the silicon oxide layer, coating a silicon nitride on the silicon oxide layer, combining the silicon nitride layer and the silicon oxide layer to form an ILD layer, performing a hydrogenization process to the ILD layer. The method in accordance to the invention can realize ion activation effect, the sufficient hydrogen atom mending can be obtained for the elements, and the property and stability for the elements can be improved substantically.

Description

Technical field [0001] The present invention relates to a method for manufacturing a thin film transistor, in particular to a method for manufacturing a thin film transistor that uses a plurality of layer structures with different thermal processes in each structure layer to improve the electrical properties of a Self-Alignment element. Background technique [0002] According to the existing self-alignment (Self-Alignment) technology. The ion activation step is performed after the interlayer dielectric layer (ILD Layer) is deposited, and the hydrogenation step is to cover a protective insulating layer (silicon nitride layer, SiNx) after the drain and source metal layers are completed. ) Afterwards, a high-temperature process is applied so that the hydrogen atoms contained in the silicon nitride layer gradually diffuse into the active layer for defect repair, so as to improve material stability and improve device characteristics. [0003] Please refer to FIGS. 4(a) and (b), which ...

Claims

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Application Information

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IPC IPC(8): G02F1/136H01L21/336H01L21/84
Inventor 陈坤宏叶光兆
Owner AU OPTRONICS CORP
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