Window-isolated minimal-hole semiconductor laser and manufacture method

Abstract

A window isolation type minimum hole laser device comprises, a substrate, a N-surface electrode made on the bottom surface of the substrate, a lower limiting layer made on the top surface of the substrate, an active region made on the top surface of the non-limiting layer, an upper layer limiting layer made on the top surface of theactive region, a ridge form wave guide region made on the top surface of the upper limiting layer, an insulating medium layer made on the top surface of the upper limiting layer and the ridge form wave guide, a window isolation region and covering layer thereon.

Description

technical field [0001] The invention relates to a semiconductor laser and a manufacturing method, in particular to a window-isolated extremely small hole semiconductor laser and a manufacturing method. Background technique [0002] High-density, high-performance data storage is an indispensable key technology in the information field and the development of computer technology. The traditional optical storage solution uses the far-field characteristics of the light source. The storage element spot is limited by the optical diffraction limit, and the storage density is low. Generally, the storage density can only be increased by reducing the wavelength of the storage light source. The storage density of commonly used CD is 0.38Gb / in 2 , DVD storage density 2.79Gb / in 2 , the storage density of the Languang DVR can only reach 15Gb / in 2 . [0003] Utilizing the evanescent wave at the near-field of the light source can break through the diffraction limit and greatly increase t...

AI Technical Summary

Problems solved by technology

In the laser structure of the prior art, there are N-type electrodes under the substrate and the lower confinement layer, an active region on the lower confinement layer, a ridge-shaped waveguide region on the active region, and current confinement layers on both sides of the ridge-shaped waveguide region. There is a P-type upper electrode on the shaped waveguide area, and the entire end face of the laser cavity is coated with a metal film, and there is a small hole in the active area. This kind of extremely small hole laser grows a metal film directly on the end face of the laser cavity with the upper and lower electrodes, which is easy The short circuit of the PN junction of the laser is caused, and the process is difficult. At the same time, due to the small size of the active area, when etching the small hole, the accurate positioning of the small hole on the active area is difficult to control, and the repeatability of the process is poor.

The above factors lead to complex process of extremely small hole laser, great difficulty in preparation, unstable output optical power, poor device performance, and extremely low yield

Images