Integrated manufacturing process for stacked aluminium metal capacitor and inductor

Abstract

The present invention provides an integrated method for manufacturing the metal capacitor and inductor of the type in which the aluminium material is stacked, comprising a dielectric layer forming step ( forming a dielectric layer on a semiconductor substrate ), a first stacking island-shaped body forming step, a first stacking layer forming step, a second stacking layer forming step, a second stacking layer capacitor dielectric layer processing step, and a third stacking island-shaped body forming step, wherein the above-mentioned first stacking layer forming step, the second stacking layer capacitor dielectric layer processing step and the third stacking island-shaped body forming step can be repeated to form the metal capacitor and inductor of the type in which the aluminum material is stacked.

Description

technical field [0001] The invention relates to an integrated process method of a capacitor and an inductor made of aluminum metal as a conductive material, in particular to an integrated process method of an aluminum metal stacked metal capacitor and an aluminum material stacked inductor. Background technique [0002] The composition diagram of known aluminum metal capacitors and inductors is shown in figure 1 shown. [0003] It is known that aluminum metal is used as the conductor body for mixed signals or high frequency signals. Due to the high resistance of aluminum metal itself, the effects produced are not ideal. [0004] For inductors, it is necessary to maintain a high Q value. The so-called Q value refers to the value obtained by dividing the product of the equivalent inductance value and the angular frequency (ω=2πf) by the equivalent resistance value when a frequency (f) is applied. In the known aluminum metal capacitors, due to the relatively high resistance v...

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Problems solved by technology

[0005] As far as known capacitors are concerned, their efficacy is still insufficient. The shortcomings include: the capacitance per unit area still needs to be increased, and at the same time, the voltage value and the generated capacitance value must be kept linear, and the The breakdown voltage of capacitors to cope with the high applied voltage values ​​that are more frequently used in modern times

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