Method for preparing CdSe quantum point

A quantum dot and content technology, applied in phonon exciters, semiconductor/solid-state device manufacturing, semiconductor lasers, etc., can solve problems such as experimental conditions restricting applications, and achieve the effects of safe and easy-to-obtain raw materials, safe and simple operation, and low price.
CN1547238AInactive Publication Date: 2004-11-17WUHAN UNIV
0 Cites 14 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
WUHAN UNIV
Publication Date
2004-11-17
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a method for producing CdSe quantum points. The invention uses the cadmium oxide and selenium as materials, produces the CdSe quantum points with variable particle size in condition of relative moderate environment. The method can avoid the problem that the tri-n-capryl phosphine (TOP) or tri-n-butyl group phosphine (TBP) are inflammable, explosive and expensive and that the toxin is strong. The operation is safe, convenient, the repeatability is good, it needn't the glove box, and the cost is low. The produce has excellent monodispersity, the particle size is controllable. The synthesized CdSe quantum points can be used as in label material light emission device, and laser field, or can be used in the biological detection and analysis further.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a preparation method of CdSe quantum dots. Background technique

[0002] Quantum dots are semiconductor nanocrystals with a radius smaller than or close to the exciton Bohr radius. Due to their unique quantum size effect and surface effect, they have broad application prospects in luminescent materials and photosensitive sensors. CdSe, CdS and other type II-VI quantum dots have special and excellent fluorescence emission properties in the visible light region. They have high fluorescence intensity, low bleaching rate, narrow fluorescence spectrum, high sensitivity, and continuous distribution of excitation spectrum. The peak position of fluorescence spectrum can be passed Change the size of quantum dots to adjust, and the emission spectrum of many II-VI quantum dots, such as CdS, CdSe, CdTe, etc., spans the visible spectrum region, and different quantum dots can be simultaneously excited at a certain wavelength to obtain a wide...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More