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Physical vapor deposition targets and methods of formation

A physical vapor phase and deposition technology, applied in thin material processing, transportation and packaging, vacuum evaporation coating, etc., can solve major cost problems

Inactive Publication Date: 2004-11-17
HONEYWELL INT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Achieving the above goals in a production environment presents significant and costly problems relative to a lab environment

Method used

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  • Physical vapor deposition targets and methods of formation
  • Physical vapor deposition targets and methods of formation
  • Physical vapor deposition targets and methods of formation

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0040] has the nominal composition GeSe 2 The dry mix powder was prepared and loaded into a hot press mold. The die was loaded into an autoclave and 2,5000 psi was applied to the die assembly. The autoclave was evacuated and backfilled with argon and maintained at a pressure of about 500 Torr. The temperature was increased from ambient to 225°C at a rate of about 300°C per hour. A temperature of 225°C was maintained for 60 minutes. . The temperature was lowered to 200°C and maintained at this temperature for 45 minutes. The temperature was lowered to room temperature and then the pressure was released. The resulting material exhibited 97% of the theoretical density.

example 2

[0042] The same procedure as described in Example 1 was performed except that the temperature of 225°C was maintained for 68 minutes instead of 60 minutes. A material with a density greater than 98% of theoretical is produced.

example 3

[0044] Except that the dry blend powder has a nominal composition Ge 3 Se 7 The same procedure as described in Example 1 was performed except that the temperature of 225° C. was maintained for 70 minutes instead of 60 minutes. Produces materials that exceed 99% theoretical density.

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PUM

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Abstract

A method includes combining a solid first material and a solid second material and melting at least a portion of the first material sufficient to coat the second material and any remaining first material. An approximately homogenous distribution of the second material can be formed throughout the liquid phase of the first material. The first material liquid phase can then be solidified to define a composite target blank exhibiting an approximately homogenous distribution of the solid second material in a matrix of the solidified first material. The first material can comprise SE and the second material can comprise Ge and / or Ag. The composite target blank can include at least about 50 vol % matrix. The first and second materials can be powdered metals. Accordingly, a physical vapor deposition target can include a matrix of a first material and an approximately homogenous distribution of particles of a second material throughout the first material matrix. The second material can include powders exhibiting particles sizes no greater than about 325 mesh.

Description

technical field [0001] The present invention relates to methods of forming physical vapor deposition targets and sputter deposition targets, to targets produced by such methods, to thin films produced using such targets, and furthermore to targets independent of their method of formation. Background technique [0002] Germanium selenide is a member of the chalcogenides in the compound. Thin films of these compounds have been used in the manufacture of computer memory devices. Proven over 340Mbits / cm 2 storage densities using germanium selenide films with a minimum monolayer feature size of approximately 0.18 microns. [0003] Chalcogenides are finding applications in the fabrication of programmable metallized memory cells, which have the potential to play an important role in future computer memories. Therefore, efficient formation of GeSe thin films with known and reproducible stoichiometry is an important goal. GeSe thin films are usually formed by co-sputtering pure G...

Claims

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Application Information

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IPC IPC(8): C22C1/05B22D19/14B22F3/10B22F3/14C22C5/06C22C28/00C22C30/00C23C14/34
CPCB22F2998/10B22F3/1035B22D19/14C22C28/00C23C14/3414Y10T428/12028Y10T428/21B22F1/12B22F1/16C23C14/34
Inventor V·莫汉J·李T·A·斯科特
Owner HONEYWELL INT INC