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Self-aligning method for outskirt state phase shifting light shade

A self-alignment and photomask technology, which is applied to the originals used in photomechanical processing, photolithographic process exposure devices, optics, etc., can solve the problems of high difficulty in production, affecting the accuracy of patterns, and cumbersome production procedures.

Inactive Publication Date: 2005-03-30
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The existing technology requires two steps of electron beam scanning, and the cost of performing electron beam scanning is not low, and it requires extremely accurate alignment steps, which is difficult to manufacture
In addition, the existing technology requires two steps of photoresist coating, and its production procedure is relatively cumbersome
And the above-mentioned alignment problem is also an important factor affecting the accuracy of the pattern

Method used

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  • Self-aligning method for outskirt state phase shifting light shade
  • Self-aligning method for outskirt state phase shifting light shade
  • Self-aligning method for outskirt state phase shifting light shade

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Embodiment Construction

[0031] What the present invention intends to disclose is a self-alignment method for manufacturing an outer edge type phase shift mask, which defines a developing area in a self-alignment manner and reduces costs. This method only needs one electron beam scanning step and one photoresist coating to simplify the manufacturing process and reduce the cost. The detailed description will be given below. refer to Figure 11 First, a transparent substrate is prepared, generally a quartz substrate 200 can be used, and then a chromium layer 202 is deposited on the above-mentioned quartz substrate 200 . The next step is to apply a photoresist 204 on the chromium layer 202 using known techniques to facilitate defining the pattern of the chromium layer 204 . like Figure 12 As shown, specific areas of the above-mentioned photoresist 204 are scanned with electron beams to define developed or undeveloped areas, which are beneficial to generate patterns. Afterwards, the above photoresist ...

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Abstract

The invention includes the following steps; providing a quartz base plate, forming chromium layer on the above-mentioned quartz base plate, then coating photoresist layer on said chromium layer and developing the above-mentioned photoresist layer to generate pattern so as to expose partial said chromium layer, using the above-mentioned photoresist layer as etching mask, etching chromium layer and quartz, processing photoresist layer to make its dimensionality be reduced, and using the processed above-mentioned photoresist layer as etching mask, etching chromium layer and defining chromium layer pattern, finally, removing said photoresist layer.

Description

technical field [0001] The invention relates to a manufacturing process of an integrated circuit, in particular to a self-alignment method for manufacturing a rim-type phase shift mask (PSM). Background technique [0002] The technology of integrated circuits (ICs) has improved significantly, and increasing the density of electronic components has become a trend. By reducing the size of electronic components, the integration density of semiconductor integrated circuits can be increased. As the size of electronic components shrinks, many new challenges continue to arise in the manufacturing process of integrated circuits. For example, lithography plays an increasingly important role as the density on semiconductor chips continues to increase. In integrated circuits, lithography and etching are important methods for manufacturing multi-layer structures, and also provide accurate alignment between multiple layers. Lithography and etching include the formation of photoresist ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/34G03F7/00G03F7/20G03F9/00H01L21/027
Inventor 洪齐元张斌
Owner SEMICON MFG INT (SHANGHAI) CORP