High output voltage transfer device
A technology of voltage transfer and high output, which is applied in the direction of output power conversion device, DC power input conversion to DC power output, electrical components, etc., and can solve the problem of occupying space
Inactive Publication Date: 2005-08-03
SUNPLUS TECH CO LTD
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[0005] However, the high output voltage shifting device of this method makes the area occupied by the overall circuit smaller due to the space occupied by the high-voltage components, but it will cause a relatively serious DC power consumption situation, that is, the current mirror circuit. The resulting DC current in the active load path
[0006] figure 2 A schematic diagram showing the current high output voltage shifting device to solve the above circuit, which uses a double current mirror to generate a differential amplification signal to improve the existing high output voltage shifting device figure 1 There will be a shortcoming of DC leakage, but at least eight high-voltage process components are required to use this circuit as a high-output voltage transfer device, which still has room for improvement in practicability
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[0018] For the preferred embodiment of the high output voltage transfer device of the present invention, please refer to image 3 The circuit diagram shown is mainly composed of P-type field effect transistors 31, 32, 33, 36, N-type field effect transistors 34, 35, 37 and inverting unit 393 and other main circuit components, wherein the P-type MOS31 , 32 is to form a current mirror circuit 38.
[0019] The sources of the above-mentioned P-type MOS 31, 32, 36 are connected to a high-level voltage node HVDD, so as to be connected to a high-level voltage source (for example: 40 volts) through the high-level voltage node HVDD. connect. The sources of the N-type MOS 34, 35, 37 are connected to a low voltage level voltage node VSS, which is a ground voltage source.
[0020] The drain of the N-type MOS 37 is connected to the drain of the P-type MOS 36 , and the output terminal 392 is connected to the drains of the N-type MOS 37 and the P-type MOS 36 respectively. There is a P-type...
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This invention relates to a high output voltage transition device including an input level circuit, a current mirror circuit and a current switch, among which, the input level circuit has a first switch and a second switch, the current mirror circuit has a third switch and a fourth switch, said first switch, the current switch and said third switch form a current path, when the third switch is conducted, said current path will generate a DC current and the fourth switch of the current mirror circuit will generate a current mirror circuit so as to close the current switch via said mirror current, and DC current will not occur.
Description
technical field [0001] The invention relates to a high output voltage transfer device, especially a high output voltage transfer device suitable for high voltage conversion. Background technique [0002] High output voltage transfer devices are usually used to convert low-voltage control signals into high-voltage control signals. For example, when applied to liquid crystal displays, a high voltage of 20-40 volts is usually required to turn on the thin film transistor, but its input signal is generally It is 3 volts, or in some logic circuits, it usually only provides an operating voltage of 1 volt, but the operating voltage of the external circuit connected to it needs 5 volts. At this time, it needs to be shifted by a high output voltage transfer device. change. [0003] figure 1 A schematic diagram showing a conventional high output voltage transfer device mainly includes two P-type metal oxide semiconductor (MOS) 11 , 12 , two N-type MOS 13 , 14 and an inverting unit 15...
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Inventor 林昆宗
Owner SUNPLUS TECH CO LTD