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Large area internal series dye sensitization nano-thin film solar cell and producing method thereof

A technology for solar cells and dye sensitization, applied in the field of solar cells, can solve problems such as difficulty in material selection, achieve high output current, avoid stability problems and industrialization technical problems, and overcome technical difficulties and material selection difficulties.

Inactive Publication Date: 2005-09-28
INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] This method can be used to prepare large-area internal parallel dye-sensitized nano-thin film solar cells, overcome the technical difficulties and material selection difficulties brought by the preparation of large-area dye-sensitized nano-thin film solar cells, and use this method to make this kind of cells through internal parallel , to obtain a higher output current than a single battery, avoiding stability problems and industrial technical problems caused by external parallel connection of batteries

Method used

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  • Large area internal series dye sensitization nano-thin film solar cell and producing method thereof
  • Large area internal series dye sensitization nano-thin film solar cell and producing method thereof
  • Large area internal series dye sensitization nano-thin film solar cell and producing method thereof

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Embodiment 1

[0034] See attached picture.

[0035] 1. Conductive glass preparation: Select conductive glass as the transparent conductive electrode material (TEC-15, 3 mm, LOF, USA), cut into 10 cm × 10 cm, clean and set aside.

[0036] 2. Parallel electrode printing: Use screen printing technology to evenly print comb-shaped silver electrodes (such as: FERRO, CN33-246), sinter at 500 degrees Celsius (500 degrees Celsius for 30 minutes), the width of the silver electrode is about 1.5 mm, and the thickness is about 20 microns , a total of 8 items. Use screen printing silver brush glass paste on the silver electrode, so that the glass paste completely protects the silver electrode (where the wide-side silver electrode is exposed), and the total width of each protected electrode after sintering at 550 degrees Celsius (550 degrees Celsius for 30 minutes) About 3 mm and a thickness of about 30 microns.

[0037] 3. Photoanode (negative electrode) preparation: printing nano-TiO 2 Slurry, sinteri...

Embodiment 2

[0042] See attached picture.

[0043] 1. Conductive glass preparation: Select conductive glass as the transparent conductive electrode material (TEC-15, 3 mm, LOF, USA) and cut it into 10 cm × 10 cm, clean and set aside.

[0044] 2. Parallel electrode printing: Use screen printing technology to uniformly print comb-shaped silver electrodes (FERRO, CN33-246), sinter at 500 degrees Celsius (30 minutes at 500 degrees Celsius), the width of the silver electrode is about 1.5 mm, and the thickness of the silver electrode is about 20 microns , a total of 8 items.

[0045] 3. Photoanode (negative electrode) preparation: screen printing nano-TiO 2 Slurry, sintered at 500 degrees Celsius (500 degrees Celsius for 30 minutes) to become nanoporous TiO 2 Thin film, about 10 microns thick.

[0046] 4. Photocathode (positive electrode) preparation: According to the size and pattern required by the design, on another piece of conductive glass that has completed parallel electrodes, screen p...

Embodiment 3

[0050] See attached picture.

[0051] 1. Conductive glass preparation: Select conductive glass as the transparent conductive electrode material (TEC-15, 3 mm, LOF, USA) and cut it into 10 cm × 10 cm, clean and set aside.

[0052] 2. Parallel electrode printing: Use screen printing technology to uniformly print comb-shaped silver electrodes (FERRO, CN33-246), sinter at 500 degrees Celsius (30 minutes at 500 degrees Celsius), the width of the silver electrode is about 1.5 mm, and the thickness of the silver electrode is about 20 microns , a total of 8 items.

[0053] 3. Photoanode (negative electrode) preparation: printing nano-TiO 2 Slurry, sintered at 500 degrees Celsius (500 degrees Celsius for 30 minutes) to become nanoporous TiO 2 Thin film, about 10 microns thick. At a concentration of 0.5mM cis-(SCN - ) 2 Bis(2,2'-bipyridyl-4,4'-dicarboxylate) ruthenium(II) dye was soaked for a day and night, after taking it out, it was washed with ethanol (analytical grade), and dri...

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Abstract

A film solar cell comprises top and bottom transparent baseboards. It is prepared by arranging conduction electrode and catalyst layer in interval on one transparent conduction film of substrate as well as arranging conduction electrode and nanomutihole semiconductor material block in interval on another one, soaking dyestuff in said nanomaterial, overlapping two transparent baseboards and sealing periphery of them to form cavity with electrolyte. The internal parallel electrode is also prepared for obtaining output current of solar cell.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a large-area internal parallel dye-sensitized nano-film solar cell and a manufacturing method thereof. technical background [0002] In 1991, the laboratory of Professor M.Grtzel of the Institute of Technology in Lausanne, Switzerland reported a new dye-sensitized nano-thin film solar cell on Nature (O'Regan, B.; Grtzel.M, 1991, 353, 737). The research results immediately received widespread international attention and attention. Since 1991, it has been an international research hotspot. Its low cost and production cost, easy industrial production technology, and broad application prospects have attracted many scientists and enterprises to invest. [0003] Dye-sensitized nano-thin-film solar cells use organic photosensitive functional molecules combined with semiconductor nanomaterials to photoelectrically convert solar energy. It combines the functions and characteristics of organ...

Claims

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Application Information

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IPC IPC(8): H01M14/00
CPCY02E10/542
Inventor 戴松元王孔嘉隋毅峰黄阳肖尚锋
Owner INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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