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Sapphire (Al2O3 single crystal) growing technology

A sapphire and single crystal technology, applied in the field of sapphire growth technology, can solve the problems of low yield, low crystal quality, affecting the quality and yield of sapphire single crystal, etc.

Active Publication Date: 2005-10-19
YUNNAN CRYSTALAND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Large bubbles will form millimeter-scale voids, while small bubbles will appear as a large number of cloud-like scattering particles, seriously affecting the quality and yield of sapphire single crystals
Although the descending method or heat exchange method has fewer bubble problems than the pulling method, the crystals produced still have problems such as low quality and low yield.

Method used

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  • Sapphire (Al2O3 single crystal) growing technology
  • Sapphire (Al2O3 single crystal) growing technology
  • Sapphire (Al2O3 single crystal) growing technology

Examples

Experimental program
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Effect test

Embodiment Construction

[0016] For the descent method:

[0017] ① if figure 2 As shown in (a), the stirrer is first placed above the crucible. Put the seed crystal in the round tube at the conical bottom of the crucible, and fill the crucible with Al 2 o 3 The raw materials are placed on the crucible holder on the crucible rod, and the whole system is evacuated and then filled with protective gas. Heating the Al in the crucible 2 o 3 The raw materials are all melted and the seed crystals at the bottom remain crystalline.

[0018] ② if figure 2 As shown in (b), after a "solid-liquid" interface is formed between the seed crystal and the melt, move the stirrer down until the stirring blade enters the melt to a position above the "solid-liquid" interface.

[0019] ③ if figure 2 As shown in (c), turn the stirrer, move down the crucible rod and the crucible into the heat preservation zone, as the crucible enters the heat preservation zone, the melt in the crucible will slowly crystallize from bo...

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Abstract

The present invention discloses a kind of alumina monocrystal growing process capable of growing alumina monocrystal with high quality and suitable for industrial production. On the basis of available crucible descending method or heat exchange method, one stirrer is added. After heating to melt the alumina material inside crucible and forming one solid-liquid interface between seed crystal and melt, the stirrer is set over the solid-liquid interface and made to rotate so as to form forced convection inside the melt, eliminate bubbles the residual gas forms and raise the quality of the produced monocrystal.

Description

Technical field: [0001] The present invention relates to a kind of crystal growth technique, more specifically a kind of sapphire (Al 2 o 3 single crystal) growth techniques. technical background: [0002] Sapphire (sapphire) is Al 2 o 3 Single crystal, with high melting point (about 2050 ℃), high hardness, good thermal conductivity, wide light transmission band, good electrical insulation, strong acid and alkali corrosion resistance, etc. Thanks Al 2 o 3 It is a compound that melts with the same composition, so the "melting-solidification" method can be used to grow Al 2 o 3 single crystal. Currently growing Al 2 o 3 Single crystal methods mainly include pulling method, guided mode method, descending method, translation method, heat exchange method, etc., each of which has its own characteristics. Among them, the basic principles and devices of the two methods of descent method and heat exchange method are relatively similar, and larger Al can be grown. 2 o 3 S...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/20
Inventor 吴星吴康
Owner YUNNAN CRYSTALAND
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