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Group III nitride semiconductor light-emitting device and method for manufacturing same

A technology for nitride semiconductors and light-emitting elements, which is applied in semiconductor devices, semiconductor lasers, electrical components, etc., can solve the problems of long time consumption, increased threshold current value, and increased manufacturing cost of light-emitting elements.

Inactive Publication Date: 2005-10-26
PIONEER CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the crystal growth rate of InGaN is lower than that of GaN, so that it takes a long time to manufacture the light emitting element
[0010] In addition, compared to GaN, InGaN requires a large amount of nitrogen source materials used in crystal growth reactions, such as ammonia, etc., which leads to an increase in the manufacturing cost of light-emitting elements
[0011] In addition, InGaN has a higher refractive index than GaN and AlGaN, so when an InGaN layer is used as a layer below the n-type cladding, light that is not fully confined by the cladding is more likely to leak
Also, when the In composition of the crack preventing layer is equal to or greater than that of the light emitting layer, the crack preventing layer acts as a light absorbing layer, causing waveguide loss
This is the unfavorable factor that the threshold current value increases

Method used

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  • Group III nitride semiconductor light-emitting device and method for manufacturing same
  • Group III nitride semiconductor light-emitting device and method for manufacturing same
  • Group III nitride semiconductor light-emitting device and method for manufacturing same

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Embodiment Construction

[0019] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that in the drawings, constituent parts and elements that are similar or equivalent to each other are denoted by the same reference numerals.

[0020] First refer to figure 2 , the LD element 1A according to the present embodiment includes a buffer layer 3 of AlN disposed on a sapphire substrate 2 . The buffer layer 3 has a thickness of about 50 nm.

[0021] An n-type contact layer 4A of n-type GaN is provided on the buffer layer 3 . This n-type contact layer 4A contains Si as a dopant. The atomic concentration of Si is 1×10 19 cm -3 . Preferably, the doping concentration is 4×10 18 cm -3 to 2×10 19 cm -3 In the range. This is because the doping concentration within this range helps to reduce the series resistance of the entire LD element.

[0022] An n-type electrode 14 is formed on the n-type contact layer 4A, and a crack p...

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Abstract

The present invention relates to a III group semiconductor light-emitting element and a production method thereof. The III group semiconductor light-emitting element includes a n-type GaN crack-proof layer (15) arranged between a n-type contact layer (4A) and a n-type cladding (5A), and wherein, the doping concentration of the crack-proof layer (15) is lower than the doping concentration of the n-type contact layer (4A).

Description

technical field [0001] The invention relates to a group III nitride semiconductor light-emitting element and a manufacturing method thereof. Background technique [0002] In recent years, light emitting diodes (hereinafter referred to as "LEDs") and laser diodes (hereinafter referred to as "LDs") both formed of Group III nitride semiconductors are known. [0003] In the LD element 1 made by using a Group III nitride semiconductor material shown in FIG. 1 , a buffer layer 3 of AlN, an n-type contact layer 4 of n-type GaN, an n-type n-type cladding layer 5 made of AlGaN, n-type guide layer 6 of n-type GaN, active layer 7 mainly composed of InGaN, p-type guide layer 8 of p-type GaN, p-type cladding layer 9 of p-type AlGaN, and the p-type contact layer 10 of p-type GaN, which are stacked on each other in the stated order. The p-type contact layer 10 is formed with a ridge 11 protruding in its thickness direction. An insulating layer is formed on the portion other than the fla...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/12H01L33/32H01S5/323H01S5/343
CPCH01S2301/173H01L33/025H01S2301/18H01S5/3086H01L33/32H01L33/02H01S5/34333H01S5/309B82Y20/00
Inventor 渡边温高桥宏和木村义则宫地护
Owner PIONEER CORP