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Substrate transfer mechanism and subtrate transfer apparatus, particle removal method, program, and storage medium

A substrate conveying and substrate technology, which is used in conveyor objects, transportation and packaging, lighting and heating equipment, etc., and can solve problems such as etching residues and film quality degradation

Active Publication Date: 2005-11-16
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, if such a substrate processing system is used to continuously process substrates, when the operating device 157 transports the substrates, particles brought into the substrate transfer chamber 154 together with the substrates or cutting dust flying when the operating device 157 operates tends to adhere to the substrate. On the substrate, for example, in the etching process, the attached particles serve as a mask, and etching residues occur. In addition, in the film formation process, the attached particles become nuclei and grow, so there is a problem that the quality of the film deteriorates.

Method used

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  • Substrate transfer mechanism and subtrate transfer apparatus, particle removal method, program, and storage medium
  • Substrate transfer mechanism and subtrate transfer apparatus, particle removal method, program, and storage medium
  • Substrate transfer mechanism and subtrate transfer apparatus, particle removal method, program, and storage medium

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Embodiment

[0173] Next, examples of the present invention will be described in detail. In addition, in the following examples, a simulation experiment was performed in a processing chamber of a processing apparatus in which the substrate transfer device 10 and the substrate transfer device 30 were set.

[0174] First, in the processing chamber of the substrate transfer device 10, prepare SiO with a particle diameter of 0.6 μm in advance. 2 The Si wafer with particles attached to the surface is placed on the lower electrode of the transfer arm that sets the processing chamber. Next, while controlling the pressure in the processing chamber to 0.13kPa (1.0Torr), the temperature of the lower electrode was raised, and the amount of SiO peeled off from the Si wafer during the temperature rise was measured. 2 The number of particles (pieces / minute). In addition, the temperature difference of the upper electrode and the temperature difference of the Si wafer which set the temperature differenc...

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Abstract

A substrate transfer mechanism for transferring a substrate includes a mounting table on which the substrate is mounted; an arm member connected to the mounting table and moving it. The substrate transfer mechanism further includes a temperature control unit for controlling temperature of the mounting table, wherein the temperature control unit forms a temperature gradient in the mounting table. The temperature control unit includes a detector for detecting temperature in an environment or a chamber in which the substrate transfer mechanism is installed a heater for heating the mounting table and a controller for controlling an operation of the heater based on the temperature in the environment or the chamber detected by the detector.

Description

technical field [0001] The present invention relates to a substrate transport mechanism, a substrate transport device having the substrate transport mechanism, a method for removing particles from a substrate transport mechanism, a method for removing particles from a substrate transport device, a program for implementing the method, and a storage medium, and in particular to a The treatment of film process, etching process, etc., the substrate conveying mechanism that conveys the substrate to a predetermined position, the substrate conveying device having the substrate conveying mechanism, the particle removal method of the substrate conveying mechanism, the particle removing method of the substrate conveying device, implementing the A program for the method, and a storage medium. Background technique [0002] Hitherto, as a substrate processing system for performing various plasma processes such as ion doping, film formation, and etching on a substrate, a clustered substra...

Claims

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Application Information

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IPC IPC(8): B65G49/05
Inventor 守屋刚中山博之奥山喜久夫岛田学
Owner TOKYO ELECTRON LTD
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