Thermally excited sound wave generating device
A technology of sound wave generation and thermal excitation, which is applied in the direction of sensors, electrical components, sensor parts, etc., can solve the problems that the sound pressure level cannot meet the needs, there is not much development prospect, and the DC component cannot be fully released.
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Embodiment 1
[0045] P-type (100) single crystal silicon substrate (80~120Ωcm, α s C s =286×10 6 ) was used as a contact electrode during anodic oxidation treatment, and a film with a thickness of 300 nm was formed by vacuum deposition of Al. Then this substrate is placed in the solution of HF (55%):EtOH=1:1, with Pt as the opposite electrode, at a current density of 100mA / cm 2 Anodizing treatment was carried out for 8 minutes to form a porous silicon layer with a thickness of about 50 μm (α 1 C 1 =0.06×10 6 ). Finally, a 50nm-thick W as a heating element film was formed on the porous silicon layer by sputtering, and a 5mm□ area element was fabricated.
Embodiment 2
[0047] On a pure copper substrate (thickness 1mm, α s C s =1393×10 6 ) The upper surface is coated with polyimide with a thickness of 50 μm (α 1 C 1 =0.26×10 6 ). Finally, a 50nm-thick W film was formed on the polyimide by sputtering as a heating element film, and a 5mm□ area element was fabricated.
Embodiment 3
[0049] On a pure copper substrate (thickness 1mm, α s C s =1393×10 6 ) on the upper surface of SiO with a thickness of 2 μm formed by sputtering 2 Layer (α 1 C 1 =3.2×10 6 ). Finally on SiO 2 A 50nm-thick W film was formed as a heating element by sputtering, and a 5mm□ area element was fabricated.
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