Thermally excited sound wave generating device

A technology of sound wave generation and thermal excitation, which is applied in the direction of sensors, electrical components, sensor parts, etc., can solve the problems that the sound pressure level cannot meet the needs, there is not much development prospect, and the DC component cannot be fully released.

Inactive Publication Date: 2005-11-16
NOKODAI TLO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, in the above-mentioned heat-activated sound wave generating device, as far as the proper state and specific mode of its multilayer structure are concerned, from the perspective of improving its performance, there is basically no development prospect in fact.
In addition, in the above-mentioned sound wave generating device, although there are many characteristics that there is no accompanying mechanical vibration at all, when it is necessary t

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0045] P-type (100) single crystal silicon substrate (80~120Ωcm, α s C s =286×10 6 ) was used as a contact electrode during anodic oxidation treatment, and a film with a thickness of 300 nm was formed by vacuum deposition of Al. Then this substrate is placed in the solution of HF (55%):EtOH=1:1, with Pt as the opposite electrode, at a current density of 100mA / cm 2 Anodizing treatment was carried out for 8 minutes to form a porous silicon layer with a thickness of about 50 μm (α 1 C 1 =0.06×10 6 ). Finally, a 50nm-thick W as a heating element film was formed on the porous silicon layer by sputtering, and a 5mm□ area element was fabricated.

Embodiment 2

[0047] On a pure copper substrate (thickness 1mm, α s C s =1393×10 6 ) The upper surface is coated with polyimide with a thickness of 50 μm (α 1 C 1 =0.26×10 6 ). Finally, a 50nm-thick W film was formed on the polyimide by sputtering as a heating element film, and a 5mm□ area element was fabricated.

Embodiment 3

[0049] On a pure copper substrate (thickness 1mm, α s C s =1393×10 6 ) on the upper surface of SiO with a thickness of 2 μm formed by sputtering 2 Layer (α 1 C 1 =3.2×10 6 ). Finally on SiO 2 A 50nm-thick W film was formed as a heating element by sputtering, and a 5mm□ area element was fabricated.

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Abstract

A thermally induced sound wave generating device comprising a thermally conductive substrate, a head insulation layer formed on one surface of the substrate, and a heating element thin film formed on the heat insulation layer and in the form of an electrically driven metal film, and wherein when the heat conductivity of the thermally conductive substrate is set as alphas and its heat capacity is set as Cs, and the thermal conductivity of the beat insulation layer is set as alphaI and its heat capacity is set as CI, relation of 1/100>=alphaICI/alphaSCS and alphaSCS >=100x10 6 is realized. This is a new technical means capable of greatly improving the function of a pressure generating device based on thermal induction.

Description

technical field [0001] The present invention relates to thermally excited acoustic wave generating devices. Specifically, the present invention is a device for generating sound waves by adding heat to the air to make the air approximately densified, and relates to a new heat-excited sound wave generator that can be effectively used in ultrasonic sound sources, speaker sound sources, exciters, etc. device. Background technique [0002] It is well known that there are various ultrasonic generating devices. Such existing ultrasonic generating devices, except for special devices using electric sparks and fluid vibrations, all utilize the conversion of various mechanical vibrations into air vibrations. There are electrodynamic type and capacitor type in the method of utilizing this kind of mechanical vibration, but in the ultrasonic field, the use of piezoelectric element is the mainstream. For example, electrodes are formed on both sides of the piezoelectric material barium ti...

Claims

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Application Information

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IPC IPC(8): H04R23/00
Inventor 越田信义椿健治
Owner NOKODAI TLO KK
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