Process for titanium nitride removal
A technology of titanium nitride and process gas, applied in the direction of gaseous chemical plating, coating, semiconductor devices, etc., can solve the problems of increasing thermal budget, high temperature, and increasing the cost of processing chambers
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Embodiment 1
[0045] Example 1: Using Remote NF 3 Combination of plasma and thermal heating to remove titanium nitride
[0046] This example illustrates a method for cleaning process chambers and parts using a combination of remote plasma and thermal heating, NF 3 as a process gas.
[0047] figure 1 A schematic process diagram of the experimental system is shown. A remote plasma generator 10 (MKS ASTRON, available from MKS Instruments of Wilmington, MA) was mounted on top of the reactor 12 . The distance between the outlet 14 of the plasma generator 10 and the coupon 16 was about 6 inches (15.25 cm). The coupon 16 is placed on the surface of a pedestal heater 18 . Use heaters to achieve different substrate temperatures. In all runs, the remote plasma generator was operated with 200 sccm NF 3 A mixture of Ar and 200 sccm was used as the process gas (supplied to the plasma generator 10 through the tube 20), and the chamber pressure was maintained at 4 torr by means of the pump port 22....
Embodiment 2
[0062] Example 2: Using Remote Cl 2 Combination of plasma and thermal heating to remove titanium nitride
[0063] This example illustrates a method for cleaning process chambers and parts using a combination of remote plasma and thermal heating, where Cl 2 as a process gas.
[0064] The test setup is the same as in Example 1.
[0065] Process gas here is 200 sccm Cl 2 and 200 sccm Ar mixture. In remote Cl 2 Under plasma, no etching was observed at 100°C, while at 350°C an etching rate of about 6 nm / min was obtained. Cl 2 gas etch faster than NF 3 Gases etch much slower. According to the CRC Handbook, among the Ti(IV) halides, TiCl 4 Is the most volatile (melting point 25 ° C, boiling point 136 ° C). TiF 4 Has a melting point of 284°C and only sublimes at higher temperatures. Based on this information, chlorine-based reagents should volatilize titanium nitride more readily than fluorine-based reagents. In combined plasma and thermal activation treatments, fluorine ...
Embodiment 3
[0066] Example 3; using NF 3 Thermal energy heating to remove titanium nitride
[0067] This comparative example illustrates a method of cleaning process chambers and parts using thermal energy heating, where NF 3 as a process gas.
[0068] The experimental setup was the same as Examples 1 and 2, except that the remote plasma was turned off and a higher chamber pressure of 8 torr was used.
[0069] NF using 500 sccm 3 flow as process gas. The etch rates of titanium nitride at 350°C and 450°C are about 0.6 nm / min and about 20 nm / min, respectively. Without remote plasma, much higher temperatures are required to remove titanium nitride for the same process gas.
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