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LED structure with gallium nitride system

A technology based on light-emitting diodes and gallium nitride, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of large gaps in lattice constants, affecting the luminous efficiency of light-emitting diodes, and large mechanical stress

Active Publication Date: 2006-03-15
FORMOSA EPITAXY INCORPORATION +1
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Problems solved by technology

However, practical observations have found that it has many shortcomings, and the two most serious ones are listed below: First, because its lattice constant is very different from that of the InGaN / GaN multiple quantum well structure, it is very easy to The electric field effect (piezo-electrical field effect) causes excessive mechanical stress, which in turn affects the luminescence characteristics of the epitaxy itself, and even destroys the epitaxy itself
Secondly, the cladding layer of aluminum gallium nitride (AlGaN) must be grown above 1000°C to obtain better epitaxial characteristics, while the active light-emitting layer of indium gallium nitride (InGaN) / gallium nitride (GaN) multiple quantum well growth temperature It is about 700 degrees Celsius to 850 degrees Celsius. Therefore, when the temperature of the active light-emitting layer rises above 1000 degrees Celsius later, the multiple quantum well structure grown at low temperature will be easily damaged, thereby affecting the structure of the light-emitting diode (MQWLEDs). Luminous efficiency

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  • LED structure with gallium nitride system
  • LED structure with gallium nitride system
  • LED structure with gallium nitride system

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no. 1 example

[0030] The first embodiment of the gallium nitride-based light-emitting diode structure of the present invention includes: a substrate 11, a buffer layer (buffer layer) 12, an n-type gallium nitride (GaN) layer 13, an active light-emitting layer 14, and a p-type cladding layer 15 , and the contact layer 16.

[0031] The substrate 11 is made of aluminum oxide single crystal (Sapphire). A buffer layer (buffer layer) 12 located on the substrate 11 is made of aluminum gallium indium nitride (AlGaN) 1-x-y Ga x In y N), wherein 0≤X1-x In x N), where 0≤X<1. The p-type cladding layer 15 has a thickness ranging from 50 angstroms to 3000 angstroms. The growth temperature of the p-type cladding layer 15 is between 600°C and 1200°C.

[0032] The contact layer 16 on the p-type cladding layer 15 is made of Mg-doped p-type gallium nitride (GaN).

[0033] The first embodiment of the GaN-based LED structure of the present invention may further include an electrode layer 17 located on th...

no. 4 example

[0044] The fourth embodiment of the gallium nitride-based light-emitting diode structure of the present invention includes: a substrate 41, a buffer layer 42, an n-type gallium nitride (GaN) layer 43, an active light-emitting layer 44, a double coating layer 45, and a contact layer 46 .

[0045] The substrate 41 is made of alumina single crystal. The buffer layer 42 on the substrate 41 is made of aluminum gallium indium nitride (AlGaN) 1-x-y Ga x In y N), wherein 0≤X1-x In x N), where 0≤X1-z In z N), where 0≤Z<1. The thickness of the second coating layer 452 is between 50 (Å) to 3000 (Å), and the growth temperature is between 600°C and 1200°C.

[0046] The contact layer located on the double coating layer 45 is made of magnesium (Mg) doped aluminum indium nitride (Al 1-x In x N) p-type gallium nitride (GaN), where 0≤X<1.

[0047] The fourth embodiment of the GaN-based LED structure of the present invention may further include an electrode layer 47 located on the conta...

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Abstract

The invention reveals a technique of making GaN light-emitting diode by using material. When the ALxInj-xN is taken as cladding layer, its lattice constant can match the GaN material so that poor epitaxy caused by too much stress can be avoided. As energy gap of ALxInj-xN is bigger than GaN, so it can prevent electron overflow. Finally, because growth temperature of the ALxInj-xN cladding layer is low, so it can prevent its active light-emitting layer and increase luminous efficiency.

Description

technical field [0001] The invention relates to a gallium nitride-based light-emitting diode structure, in particular aluminum indium nitride (AlN) made of a p-type cladding layer x In 1-x The N) material achieves the purpose of matching the lattice constant with the gallium nitride (GaN) material, so as to avoid poor characteristics of epitaxy. Background technique [0002] The structure of indium gallium nitride (InGaN) / gallium nitride (GaN) multiple quantum well light-emitting diodes (MQW LEDs) in the prior art uses p-type aluminum gallium nitride (AlGaN) as the cladding layer, covering Cover and protect the InGaN active light-emitting layer. However, practical observations have found that it has many shortcomings, and the two most serious ones are listed below: First, because its lattice constant is very different from that of the InGaN / GaN multiple quantum well structure, The electric field effect (piezo-electrical field effect) causes excessive mechanical stress, wh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/12
Inventor 武良文涂如钦游正璋温子稷简奉任
Owner FORMOSA EPITAXY INCORPORATION
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