Face-down bonding structure with low-melting point convex point and making method

A technology of flip-chip welding and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., and can solve problems such as enlarged bump area of ​​flip-chip soldering, damage to ultrasonic power devices, and high melting point of electrodes, achieving Good adhesion, reduced device damage, lower melting point

Inactive Publication Date: 2006-05-10
TIANJIN POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to improve the thermal conductivity and electrical conductivity of the device, the bump area of ​​flip-chip soldering becomes larger, which brings certain difficulties to soldering.
Among

Method used

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  • Face-down bonding structure with low-melting point convex point and making method
  • Face-down bonding structure with low-melting point convex point and making method
  • Face-down bonding structure with low-melting point convex point and making method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0070] Example 1:

[0071] Side view of bump structure see image 3 , in the figure, the bump 4 is covered with a layer of Au / Sn alloy layer 5 or other low melting point alloy layer such as Pb / Sn, with a thickness of 0.01 μm. The Au / Sn alloy layer 5 can be formed by an evaporation process or a sputtering process. See the side view of the pad structure corresponding to the bump figure 2 .

Example Embodiment

[0072] Example 2:

[0073] The side view of the bump structure see figure 1 . See the side view of the pad structure corresponding to the bump Figure 4 , in the figure, the pad 7 is covered with a layer of Au / Sn alloy layer 5 or other low melting point alloy layer such as Pb / Sn, with a thickness of 0.01 μm. The Au / Sn alloy layer 5 may be formed by an evaporation process or by a sputtering process.

Example Embodiment

[0074] Example 3:

[0075] Side view of bump structure see image 3 , in the figure, the bump 4 is covered with a layer of Au / Sn alloy layer 5 or other low melting point alloy layer such as Pb / Sn, with a thickness of 0.01 μm. The Au / Sn alloy layer 5 can be formed by an evaporation process or a sputtering process. See the side view of the pad structure corresponding to the bump Figure 4 In the figure, the pad 7 is also covered with a layer of Au / Sn alloy layer 5 or other low melting point alloy layer such as Pb / Sn, with a thickness of 0.01 μm. The Au / Sn alloy layer 5 may be formed by an evaporation process or by a sputtering process.

[0076] A specific manufacturing method of the pad electrodes and bumps capable of realizing the flip-chip bonding structure of the present invention will be described in detail below.

[0077] 1. Bumping process

[0078] 1. Fabrication of n-electrode insulating layer on silicon substrate

[0079] (1) Deposition of 0.3 μm thick SiO on the s...

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Abstract

This invention provides one reverse welding structure with low melt point and its process method, which is the one improved on General pure gold protruding point's process method, wherein, the points and weld panel adopt Ti/Au structure with one evaporated layer of Au/Sn alloy or other alloy layer with low melt point. The invention method avoids the direct friction as protective parts. In welding the points, it adopts thermal pressure welding and ultrasonic welding binding to improve welding intensity.

Description

technical field [0001] The invention relates to a high-power lighting device, in particular to a flip-chip welding structure of a power light-emitting diode, which belongs to the technical field of semiconductor optoelectronics. Background technique [0002] From the perspective of practical application, high-power LED devices that are easy to install and use and relatively small in size will surely replace traditional low-power LED devices in most lighting applications. Its advantages are very obvious. In order to meet the needs of lighting, lighting fixtures composed of low-power LEDs must concentrate the light energy of many LEDs to meet the design requirements; its disadvantages are complicated circuits and poor heat dissipation. The current-voltage relationship must design a complex power supply circuit. In contrast, the power of a single high-power LED is much greater than that of a single LED equal to the sum of several low-power LEDs. The power supply line is relati...

Claims

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Application Information

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IPC IPC(8): H01L23/48H01L21/48H01L21/60
CPCH01L24/83H01L2924/01322
Inventor 牛萍娟贾海强陈宏刘宏伟杨广华高铁成罗惠英
Owner TIANJIN POLYTECHNIC UNIV
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