Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Face-down bonding structure with low-melting point convex point and making method

A technology of flip-chip welding and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., and can solve problems such as enlarged bump area of ​​flip-chip soldering, damage to ultrasonic power devices, and high melting point of electrodes, achieving Good adhesion, reduced device damage, lower melting point

Inactive Publication Date: 2006-05-10
TIANJIN POLYTECHNIC UNIV
View PDF0 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to improve the thermal conductivity and electrical conductivity of the device, the bump area of ​​flip-chip soldering becomes larger, which brings certain difficulties to soldering.
Among them, the pure gold welding electrode has a high melting point, so ultrasonic welding is generally required, and the ultrasonic power used for large-area bump welding is too high to easily damage the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Face-down bonding structure with low-melting point convex point and making method
  • Face-down bonding structure with low-melting point convex point and making method
  • Face-down bonding structure with low-melting point convex point and making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] Side view of bump structure see image 3 , in the figure, the bump 4 is covered with a layer of Au / Sn alloy layer 5 or other low melting point alloy layer such as Pb / Sn, with a thickness of 0.01 μm. The Au / Sn alloy layer 5 can be formed by an evaporation process or a sputtering process. See the side view of the pad structure corresponding to the bump figure 2 .

Embodiment 2

[0073] The side view of the bump structure see figure 1 . See the side view of the pad structure corresponding to the bump Figure 4 , in the figure, the pad 7 is covered with a layer of Au / Sn alloy layer 5 or other low melting point alloy layer such as Pb / Sn, with a thickness of 0.01 μm. The Au / Sn alloy layer 5 may be formed by an evaporation process or by a sputtering process.

Embodiment 3

[0075] Side view of bump structure see image 3 , in the figure, the bump 4 is covered with a layer of Au / Sn alloy layer 5 or other low melting point alloy layer such as Pb / Sn, with a thickness of 0.01 μm. The Au / Sn alloy layer 5 can be formed by an evaporation process or a sputtering process. See the side view of the pad structure corresponding to the bump Figure 4 In the figure, the pad 7 is also covered with a layer of Au / Sn alloy layer 5 or other low melting point alloy layer such as Pb / Sn, with a thickness of 0.01 μm. The Au / Sn alloy layer 5 may be formed by an evaporation process or by a sputtering process.

[0076] A specific manufacturing method of the pad electrodes and bumps capable of realizing the flip-chip bonding structure of the present invention will be described in detail below.

[0077] 1. Bumping process

[0078] 1. Fabrication of n-electrode insulating layer on silicon substrate

[0079] (1) Deposition of 0.3 μm thick SiO on the silicon substrate 2 ;...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Heightaaaaaaaaaa
Diameteraaaaaaaaaa
Heightaaaaaaaaaa
Login to View More

Abstract

This invention provides one reverse welding structure with low melt point and its process method, which is the one improved on General pure gold protruding point's process method, wherein, the points and weld panel adopt Ti / Au structure with one evaporated layer of Au / Sn alloy or other alloy layer with low melt point. The invention method avoids the direct friction as protective parts. In welding the points, it adopts thermal pressure welding and ultrasonic welding binding to improve welding intensity.

Description

technical field [0001] The invention relates to a high-power lighting device, in particular to a flip-chip welding structure of a power light-emitting diode, which belongs to the technical field of semiconductor optoelectronics. Background technique [0002] From the perspective of practical application, high-power LED devices that are easy to install and use and relatively small in size will surely replace traditional low-power LED devices in most lighting applications. Its advantages are very obvious. In order to meet the needs of lighting, lighting fixtures composed of low-power LEDs must concentrate the light energy of many LEDs to meet the design requirements; its disadvantages are complicated circuits and poor heat dissipation. The current-voltage relationship must design a complex power supply circuit. In contrast, the power of a single high-power LED is much greater than that of a single LED equal to the sum of several low-power LEDs. The power supply line is relati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/48H01L21/48H01L21/60
CPCH01L24/83H01L2924/01322
Inventor 牛萍娟贾海强陈宏刘宏伟杨广华高铁成罗惠英
Owner TIANJIN POLYTECHNIC UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com