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CMOS image sensor and method for fabricating the same

An image sensor and patterning technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve problems such as changes in transistor characteristics and reduced production

Inactive Publication Date: 2006-06-28
DONGBUANAM SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, due to inaccuracies inherent in the photomask processing of the ion implantation process, the gate is usually partially exposed so that ions are also implanted into the silicon substrate through the exposed portion of the gate.
Therefore, the channel region formed below the gate may be affected by the implanted ions, resulting in variations in transistor characteristics across the array, thereby reducing yield

Method used

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  • CMOS image sensor and method for fabricating the same
  • CMOS image sensor and method for fabricating the same
  • CMOS image sensor and method for fabricating the same

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Embodiment Construction

[0018] Hereinafter, preferred embodiments of the present invention will be described in detail, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0019] CMOS image sensors are constructed as an array of pixels, each pixel consisting of an arrangement of four transistors and a photodiode.

[0020] Such as figure 1 As shown, a semiconductor substrate (silicon substrate) 100 of a CMOS image sensor according to the present invention includes a photodiode PD as a light receiving region formed in a predetermined surface of the semiconductor substrate. The active region 130 (preferably formed of polysilicon) is buried in the semiconductor substrate 100 in the shape of a trench. As such, if the transfer gate 210 is turned on, the channel region 140 extending from the photodiode PD to the active region 130 under the trench is formed deep inside the se...

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Abstract

The invention discloses a CMOS image sensor and a manufacturing method thereof, which form a trench-shaped transfer gate for better transmitting electrons generated by light incident to a photodiode to obtain improved transmission characteristics. The CMOS image sensor includes: a semiconductor substrate having at least one active region defined by a shallow trench isolation region; a light receiving region formed on a surface of the semiconductor substrate; and a transfer gate buried in the light receiving region and the at least one active region. In the semiconductor substrate between the regions, the transfer gate has a grooved shape of a predetermined depth.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2004-0111470 filed on December 23, 2004, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a complementary metal-oxide-semiconductor (CMOS) image sensor, and more particularly, to a CMOS image sensor and a method of manufacturing the same, which employs a trench that facilitates the transport of electrons generated by light incident to a photodiode shaped transfer gate. Background technique [0003] An image sensor is a semiconductor device that converts an optical image into an electrical signal. It can be divided into a CMOS image sensor or a charge-coupled device, which includes a plurality of metal-oxide-silicon (MOS) capacitors arranged adjacent to each other, wherein charge carriers are stored in the capacitor in and transferred to the capacitor. On the other hand, a CMOS image sensor adopts CMOS technology, and empl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/822
CPCH01L27/1463H01L27/14643H01L27/14689H01L27/146H01L27/14H01L31/10
Inventor 任劤爀
Owner DONGBUANAM SEMICON