Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process for preparing test tube brush type silicon carbide

A technology of silicon carbide and test tube brush, which is applied in the field of preparation of test tube brush-shaped silicon carbide, can solve the problems that silicon carbide nanorods cannot be industrialized, and achieve the effects of simple method, uniform diameter distribution and simple reaction equipment

Inactive Publication Date: 2006-08-23
ZHEJIANG SCI-TECH UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among the many known synthesis methods of silicon carbide nanorods, due to many deficiencies and defects, silicon carbide nanorods have not been industrialized so far.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for preparing test tube brush type silicon carbide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Place the crucible with the raw materials in a vacuum high-temperature sintering furnace, and heat up to 1650°C at a heating rate of 10°C / min for 3 hours. The entire device is carried out in an Ar atmosphere to avoid any oxidation behavior. At the end of the reaction, the black polyacrylonitrile-based carbon fiber turns into an off-white test tube brush-like silicon carbide, as shown in the figure.

Embodiment 2

[0017] Place the crucible with the raw materials in a vacuum high-temperature sintering furnace, and heat up to 1450°C at a heating rate of 30°C / min for 9 hours. The entire device is carried out in an Ar atmosphere to avoid any oxidation behavior. After the reaction is over, the black carbon fiber turns into an off-white test tube brushed silicon carbide.

Embodiment 3

[0019] Place the crucible with the raw materials in a vacuum high-temperature sintering furnace, and heat up to 1500°C at a heating rate of 20°C / min for 6 hours. The entire device is carried out in an Ar atmosphere to avoid any oxidation behavior. After the reaction is over, the black polyacrylonitrile-based carbon fiber turns into an off-white test tube brush-like silicon carbide.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The preparation process of test tube brush shaped silicon carbide includes the following steps: setting silicon inside graphite crucible, distributing polyacrylonitrile-base carbon fiber on the crucible and covering with one graphite crucible in the same size to increase contact between carbon fiber and silicon vapor; setting the crucible without direct contact between the Si powder and carbon fiber inside vacuum high temperature sintering furnace under Ar atmosphere, heating in the temperature raising rate of 10-30deg.c / min to 1450-1650deg.c and maintaining for 3-9 hr; and turning off the power supply after finishing reaction while maintaining circular cooling water until cooling completely to obtain grey silicon carbide.

Description

Technical field [0001] The invention relates to a preparation method of a test tube brush-shaped silicon carbide. Background technique [0002] Silicon carbide fiber materials have great application potential in high temperature, high frequency, high power, high voltage optoelectronics and radiation resistance. Silicon carbide fiber reinforced ceramic matrix composites have excellent high-temperature mechanical properties and are widely used as high-temperature structural components, such as rocket tubes, missile nose cones, wing fronts, and brake pads. Silicon carbide fiber is a new type of semiconductor material. With its excellent physical and chemical properties and electrical properties, it has become the most important semiconductor material for manufacturing short-wavelength optoelectronic devices, high-temperature devices, anti-radiation devices, and high-power / high-frequency electronic devices. Silicon carbide fiber will be one of the most eye-catching high-tech material...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 陈建军潘颐杨光义吴仁兵
Owner ZHEJIANG SCI-TECH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com