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Water-based polishing pads and methods of manufacture

A polishing pad and substrate technology, applied in the field of polishing pads, can solve the problems of high cost, processing hemp, and differences between pads and pads

Inactive Publication Date: 2006-09-13
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, commonly used (organic) solvents such as N,N-dimethylformamide can be numb and expensive to handle
In addition, such cushions may vary from pad to pad due to random deposition and pore structure formed during the coagulation process

Method used

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  • Water-based polishing pads and methods of manufacture
  • Water-based polishing pads and methods of manufacture
  • Water-based polishing pads and methods of manufacture

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0043] The table below illustrates the improvement in defectivity of the water-based polishing pads of the present invention. A water-based pad was made by mixing 75 grams of W-290H from Crompton Ltd. with 25 grams of Rhoplex® E-358 from Rohm and Haas Company in a 3:1 ratio in a mixing vessel 2 minutes. 1 gram of Foamaster(R) 111 available from Cognis was then added to the mixing vessel and mixed for an additional 2 minutes. 0.923 grams of Expancel(R) 551 DE40d42 (Expancel(R) 551 DE40d42 are hollow polymeric microspheres produced by Akzo Nobel with a weight average diameter of 30-50 microns) were then added to the mixing vessel and stirred for an additional 5 minutes. 1 gram of thickeners, Acrysol(R) ASE-60 and 5Acrysol I-62, available from Rohm and Haas, was then added to the mixing vessel and mixed for 15 minutes. The mixture was then coated (50 mil (1.27 mm) wet thickness) onto 435 PET film from Dupont Teijin and dried in a hot air oven at 60°C for 6 hours. The resulting...

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Abstract

A chemical mechanical polishing pad (300) comprises a polymeric matrix having microspheres dispersed in it. The polymeric matrix is formed of water-based polymer(s). An independent claim is included for manufacture of chemical mechanical polishing pad which involves supplying a water-based fluid phase polymer composition containing microspheres onto a continuous transported backing layer (302), shaping the polymer composition on the backing layer into a fluid phase polishing layer (304) having preset thickness, and curing the polymer composition on the backing layer in a curing oven to convert the polymer composition to a solid phase polishing layer of the polishing pad.

Description

technical field [0001] The present invention relates to polishing pads for chemical mechanical planarization (CMP), and more particularly, the present invention relates to water-based polishing pads and methods of making water-based polishing pads. Background technique [0002] In the manufacture of integrated circuits and other electronic devices, layers of conductive, semiconducting, and dielectric materials are deposited or removed from the surface of semiconductor wafers. Thin layers of conductive, semiconducting, and dielectric materials can be deposited using a wide variety of deposition techniques. Deposition techniques commonly used in modern methods include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD) and electrochemical plating (ECP). [0003] As layers of material are sequentially deposited and removed, the uppermost surface of the wafer becomes uneven. Since subsequ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24D13/14B24D18/00B24B29/00H01L21/304B24B37/24B24D99/00
CPCB29C39/18B24B37/24B29C39/14B24D11/001B24D3/32A01K47/02A01K47/04
Inventor C·H·杜翁D·B·詹姆斯
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC