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Etching method and apparatus

A technique for etching and etching films, which is used in transmission systems, electrical components, plasma, etc.

Inactive Publication Date: 2006-09-27
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the technology of this document 1, there is no description on the method of determining the uniform flow rate ratio of the flow rate in the center region of the wafer W and the flow rate in the peripheral region when the above-mentioned CF-based gas is used for the etching process.

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  • Etching method and apparatus
  • Etching method and apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0138] Use of CHF 3 Gas as CF gas, using Ar and N 2 The gas is used as the process gas of the diluent gas, pre-mixed, and introduced into the figure 1 In the plasma etching apparatus shown, under the following processing conditions, the supply amount to the central region of the gas supply surface and the supply amount to the peripheral region were changed, and the resist film formed on the wafer W (over the entire wafer Formed on the surface of W, no pattern is formed) for etching treatment, by the CF density at this time, CF 2 The uniformity of the density in the plane of the wafer W was measured by LIF (Laser Induced Fluorescence). Here, the above-mentioned flow rate ratio C / E of the processing gas is set to 0 / 10, 3 / 7, 5 / 5, 7 / 3, and 10 / 0. The flow rate ratio C / E being 0 / 10 means that the processing gas is supplied only to the peripheral region of the gas supply surface.

[0139]

[0140] · CHF 3 Gas, Ar gas, N 2 gas flow ratio

[0141] CHF 3 :Ar:N 2 =40:1000:80sccm...

Embodiment 2

[0149] Use of CHF 3 Gas as CF type gas, using Ar gas and N 2 The gas is used as the processing gas of the diluent gas, after pre-mixing, it is introduced into such as figure 1 In the plasma etching apparatus shown, under the following processing conditions, the flow rate of the processing gas in the central region of the gas supply surface and the flow rate in the peripheral region are changed, and the film to be etched (SiO 2 film) was etched, and the remaining resist film, etching depth, upper CD, and in-plane uniformity at the bending position were evaluated. At this time, the flow rate ratios of the gas in the central area and the peripheral area of ​​the gas supply surface are treated as 1 / 9, 5 / 5, and 9 / 1 as the flow rate ratio C / E.

[0150] here, in Figure 8 In (a), 71 is the SiOC film as the film to be etched, 72 is the resist film formed on the surface of the SiOC film, the above-mentioned resist remaining film represents the distance A, the etching depth represent...

Embodiment 3

[0160] Use of CHF 3 The gas is CF type gas, Ar gas, N 2 Gas and O 2 The gas is pre-mixed as a process gas for diluent gas and is introduced into e.g. figure 1 In the plasma etching apparatus shown in , under the following processing conditions, the flow rate of the processing gas supplied to the central region and the peripheral region of the above-mentioned gas supply surface was changed, and the etching process was carried out on the film to be etched (SiOCH film) formed on the wafer W. In the etching process, the in-plane uniformity of the upper CD formed by etching at this time and the in-plane uniformity of the etching depth were evaluated.

[0161]

[0162] ·Processing pressure: 6.65Pa (50mTorr)

[0163] · Frequency and power of the first high-frequency power supply 61: 60MHz, 1500W

[0164] · Frequency and power of the second high-frequency power supply 65: 2MHz, 2800W

[0165] Figure 9 (a) showing the in-plane uniformity of the above upper CD, Figure 9 (b) s...

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Abstract

The invention relates to a method for improving the uniformity of etches treatment on the base plate, when using the gas with carbon and halide atom to etch, wherein said method comprises: the gas supplier (4) feeds the first processing gas that contains carbon and fluorine while one molecule has not than 2 carbon atoms to the chip (W), to etch, and the amount of first gas room (45) is higher than the amount of second gas room (46); in addition, feeding second processing gas to etch, while one molecule has more than 3 carbon atoms, while the amount of second gas room (46) is higher than the amount of first gas room (450; said gas supplier (4) can feed processing gases to the chip (W) from the first gas room (45) opposite to the central area of semi-conductor chip (W) and the second gas room (46) opposite to the periphery of chip (W).

Description

technical field [0001] The present invention relates to a technique for etching a film to be etched formed on a substrate such as a semiconductor wafer using a gas containing carbon and halogen. Background technique [0002] In the manufacturing process of a semiconductor device or an LCD substrate, various devices are used as an etching process for processing the shape of a thin film, including an etching process. As one example, there is a parallel plate type plasma etching apparatus, in which, for example, a parallel plate electrode composed of a pair of upper electrodes and a lower electrode is arranged in a chamber, and a process gas is introduced into the chamber while simultaneously A high-frequency is applied to one electrode to form a high-frequency electric field between the electrodes. The high-frequency electric field forms a plasma of a processing gas, for example, etching a semiconductor wafer W (hereinafter referred to as "wafer W"). [0003] Here, for exampl...

Claims

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Application Information

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IPC IPC(8): H01L21/3065H01L21/00H05H1/46H01J37/32C23F1/00C23F4/00
CPCH04B1/40
Inventor 田原慈西野雅
Owner TOKYO ELECTRON LTD
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