Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Non-integral bit system

A non-integer, positive integer technology, applied in the field of data storage and transmission systems, can solve problems such as large research and development costs, delays in market entry time, etc.

Inactive Publication Date: 2006-10-04
张国飙
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Achieving these indicators requires a large investment in research and development and delays in market entry

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Non-integral bit system
  • Non-integral bit system
  • Non-integral bit system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] Figure 2A Represents an N-ary non-integer bit parallel input system. In a parallel input system, multiple units are accessed simultaneously. Typical parallel-input systems include semiconductor memories such as Flash memory, EPROM, EEPROM, MRAM, FeRAM, DRAM, SRAM, variable resistance memories such as phase-change memories and Ovonyx unified memories (OUM), mask-programmable memories, diode memories, inverse Fuse memory, etc. Semiconductor memories are generally based on memory arrays, thereby being able to provide parallel access. Figure 2A The N-ary non-integer bit parallel input system contains a word 10 and an N-ary-binary decoder 100. The word 10 contains m n-ary units 10a, 10b...10m, and each unit has N states (the expression N×m represents m n-ary units or signals). Physical characteristics that can be used to represent a state include: threshold voltage, charge, current, voltage, resistance, optical transmittance or reflectance, thermal conductivity, electr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In the invention, it adds one or more to N (state number of unit element) instead of the b (unit element bit) as N no longer the integral order of two and b is non integer. As the non-integral-bit system, this invention can improve system efficiency by adjusting bit width.

Description

technical field [0001] This invention relates to integrated electronic systems, and more particularly to data storage and transmission systems. Background technique [0002] The use of multi-level storage elements (multi-level cells) is beneficial to improve storage density. A multi-layer memory element (such as an N-layer flash memory element) can have N (unit cell state number, N>2) states, such as N Vt (threshold voltage) values. The b (unit bit) of the conventional multi-layer flash unit is an integer, so the industry immediately started the 3-bit flash unit (b=2) after successfully pushing the 2-bit flash unit (b=2) to the market. 3) and development of 4-bit flash cells (b=4). While changing b from 1 to 2 is easy (N increases from 2 to 4 - increments of 2), going from 2 to 3 and back to 4 is extremely difficult, because after b = 2, each increment of b by 1 results in N is greatly increased: when b=3, N becomes 2 3 (=8, 4 greater than b=2)...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C11/56G11C16/04H01L27/10
Inventor 张国飙
Owner 张国飙
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com