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Vertical-structure non-polarized gallium substrate device and side epitaxial growth method

A gallium nitride-based, vertical structure technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low heat dissipation efficiency, uneven current distribution, easy breakdown of devices, etc., and achieve heat conduction efficiency high effect

Inactive Publication Date: 2006-10-25
ZHEJIANG INVENLUX TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device
(2) Sapphire is a material with low thermal conductivity, and the heat dissipation problem of high-power devices needs to be solved
(3) Gallium nitride-based LEDs with a lateral structure have disadvantages such as current crowding and uneven current distribution.
[0004] However, the disadvantage of the lateral epitaxy method in scheme (1) is that there are voids in the gallium nitride-based epitaxial layer, which is easy to deform at high temperature, and the device is easy to be broken down, etc.
Moreover, GaN-based devices with non-polarized lateral structures still have disadvantages such as current congestion and uneven current distribution, low heat dissipation efficiency, etc.

Method used

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  • Vertical-structure non-polarized gallium substrate device and side epitaxial growth method
  • Vertical-structure non-polarized gallium substrate device and side epitaxial growth method
  • Vertical-structure non-polarized gallium substrate device and side epitaxial growth method

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example

[0052] The first specific implementation example of the process flow step 102: using MOCVD, grow a layer of gallium nitride substrate with a thickness between 1 nm and 90 nm on the r-plane sapphire growth substrate (at a temperature of 400-900 ° C). Nucleation layer. An a-plane non-polarized first GaN-based epitaxial layer is grown on the crystal nucleus layer. A specific implementation example of growing a non-polarized a-plane first GaN-based epitaxial layer: At a temperature above about 1000°C and at a pressure less than 1 atmosphere, HCl flow through the Ga source is initiated using the appropriate V / III ratio (The temperature of the Ga source is higher than 700 degrees C), generate GaCl, and use the carrier gas (including at least part of H2) to bring the GaCl to the growth substrate region. On the growth substrate, GaCl reacts with ammonia gas (NH3) to form a non-polarized first GaN-based epitaxial layer with a thickness of 0.5-5 microns.

[0053] The second specific i...

example 1

[0069] Example 1: growing a-gallium nitride-based epitaxial layer on r-sapphire. Then, at a temperature of 800 to 900 degrees and an atmospheric pressure, grow 2 to 20 cycles of multiple quantum wells on the a-gallium nitride-based epitaxial layer: 6 to 10 nanometers thick InGaN barrier (barrier) and 1 to 5 Nanometer thick InGaN well (well). [US patent application, application number: 20050040385].

example 2

[0070] Example 2: growing a-gallium nitride-based epitaxial layer and a-GaN / AlGaN multiple quantum wells sequentially on r-sapphire.

[0071] The second specific implementation example of process steps 108 / 109: First, grow a layer of non-polarized first-type GaN-based confinement layer on the portion without voids a gallium-based confinement layer, and then grow a non-polarized active layer, and then grow a non-polarized second-type gallium nitride-based confinement layer on the non-polarized active layer.

[0072] If the non-polarized first-type GaN-based confinement layer is selected to be n-type, the non-polarized second-type GaN-based confinement layer is selected to be p-type, and vice versa.

[0073] Process flow step 110 . A current spreading layer and a patterned second electrode are respectively stacked on the non-polarized second type GaN-based confinement layer. The material of the current spreading layer is selected from a group of materials including, but not li...

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Abstract

This invention discloses a vertical non-polar GAN device (including GaN LED) and its production method, in which, a reflection / ohm / stress buffer layer is laminated between the conductive support substrate and a non-polar GaN epitaxial layer, the production method includes: growing an intermediate layer, a non-polar first GaN epitaxial layer and a mask layer, etching the mask layer to form a GaN window and a mask layer strip order on the growing substrate, etching the mask layer to form a GaN window and mask layer strip, growing a non-polar first kind GaN limit layer, laminating the conductive reflection / ohm / stress buffer layer, bonding the conductive support substrate, peeling off the growing substrate, the intermediate layer, the non-polar first GaN epitaxial layer, the mask layer strip and the part with cavities in the non-polar first kind GaN limit layer to be heat-processed and growing non-polar GaN devices on the part without cavities in the limit layer.

Description

technical field [0001] The present invention discloses non-polar gallium nitride-based devices (including gallium nitride-based LEDs) with a vertical structure and a production process using lateral epitaxy overgrowth (LEO), which belongs to semiconductors The field of electronic technology. Background technique [0002] In industry, c-sapphire substrate is used as one of the main growth substrates for growing polarized GaN-based devices (including GaN-based LEDs) with lateral structures. However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device. (2) Sapphire is a material with low thermal conductivity, and the heat dissipation problem of high-power devices needs to be solved. (3) GaN-based LEDs with a lateral s...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L33/00H01L33/32H01L33/36
Inventor 彭晖彭一芳
Owner ZHEJIANG INVENLUX TECH