Sputtering target, optical information recording medium and process for producing the same
A recording medium and sputtering target technology, which is applied in the field of sputtering targets, can solve the problems of poor optical properties such as poor amorphousness, good film forming speed, and poor amorphousness, and achieve improved characteristics, increased productivity, and high transmittance Effect
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Problems solved by technology
Method used
Examples
Embodiment 1-3
[0049] will be equivalent to 4N of 5μm or less In 2 o 3 powder, ZnO powder, SiO 2 powder, and SnO equivalent to 4N with an average particle size of 5 μm or less 2 The powder was blended according to the composition shown in Table 1, mixed by wet method, dried and calcined at 1100°C.
[0050] Then, the calcined powder was finely pulverized by wet method to an average particle diameter of 1 μm, and then a binder was added and granulated by a spray dryer. The granulated powder is then cold-pressed and sintered at 1200°C in an oxygen environment under normal pressure, and finally the sintered material is machined into the shape of the target. The composition and composition ratio of this target (In / (In+Zn+Sn+Si), Zn / (In+Zn+Sn+Si), Sn / (In+Zn+Sn+Si), Si / (In+ Zn+Sn+Si)) are shown in Table 1.
[0051] example
composition
composition
In / (In+Zn+Sn+Si)
Zn / (In+Zn+Sn+Si)
Sn / (In+Zn+Sn+Si)
Si / (In+Zn+Sn+Si)
Transmittance ...
Embodiment 4-6
[0066] will be equivalent to 4N of 5μm or less In 2 o 3 powder, ZnO powder, B 2 o 3 powder, and SnO equivalent to 4N with an average particle size of 5 μm or less 2 The powder was blended according to the composition shown in Table 2, mixed by wet method, dried and calcined at 1100°C.
[0067] Then, this calcined powder was finally processed into the shape of a target in the same manner as in Examples 1-3. The composition and composition ratio of this target (In / (In+Zn+Sn+B), Zn / (In+Zn+Sn+B), Sn / (In+Zn+Sn+B), B / (In+ Zn+Sn+B)) are shown in Table 2.
[0068] example
composition
composition
In / (In+Zn+Sn+B)
Zn / (In+Zn+Sn+B)
Sn / (In+Zn+Sn+B)
B / (In+Zn+Sn+B)
633nm
(%)
633nm
Amorphous
sputtering
Way
Film forming speed
(A / sec)
Reality
apply
4
In 2 o 3
ZnO
SnO 2 ...
PUM
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Abstract
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