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Method for washing crystal chip

A wafer and dry cleaning technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor adhesion, film peeling, affecting film adhesion, etc., to ensure the effect of yield

Active Publication Date: 2007-03-07
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this situation, the particles remaining on the crystal back 24 and the crystal edge 26 will affect the adhesion between the film (not shown) and the wafer 20 in the subsequent deposition process, and the poor adhesion will make the film in the subsequent deposition process. During the process, the thermal effect causes shedding, which affects the product yield
[0010] As can be seen from the above, the existing method for cleaning wafers obviously has its shortcoming, and still awaits further improvement

Method used

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  • Method for washing crystal chip
  • Method for washing crystal chip
  • Method for washing crystal chip

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Embodiment Construction

[0048] Please refer to FIG. 3 , which is a flowchart of a method for cleaning a wafer according to a preferred embodiment of the present invention. As shown in Figure 3, the method for cleaning wafer of the present invention comprises the following steps:

[0049] Step 50: providing a wafer, and loading the wafer into a reaction chamber of a deposition machine;

[0050] Step 52: Then lift the wafer, and perform a dry cleaning process on the wafer; and

[0051] Step 54: Perform a deposition process on the wafer.

[0052]As can be seen from the above, the method for cleaning the wafer of the present invention is to lift the wafer and perform a dry cleaning process before performing the deposition process, thereby removing the particles attached to the crystal surface, crystal back and crystal edge of the wafer, so as to Ensure the yield of subsequent deposition processes. Please continue to refer to FIG. 4 to FIG. 6 . FIG. 4 to FIG. 6 are schematic diagrams of a method for cl...

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Abstract

This invention provides one crystal cleaning method, which comprises the following steps: providing one crystal slice with one reaction chamber; then jacking crystal slice for one drying clean process to clean crystal surface, back and edge; finally processing one deposition with drying clean process and deposition process by use of in-situ type.

Description

technical field [0001] The invention relates to a method for cleaning a wafer, in particular to a method for cleaning a wafer which can effectively remove particles attached to the wafer's crystal face, crystal back and crystal edge by lifting the wafer before performing a deposition process. Background technique [0002] Generally speaking, the semiconductor process mainly utilizes repeated deposition process, photolithography process and etching process, etc., to stack the desired semiconductor elements. In the process of each process, particles will inevitably be generated, especially after the etching process, there will often be a large amount of polymer residues on the surface of the wafer (including crystal planes, crystal backs and crystal edges), If these high molecular polymers are not removed, they may become the source of particles due to heat in the subsequent process, thereby affecting the yield rate of the subsequent process and the stability of the product. ...

Claims

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Application Information

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IPC IPC(8): H01L21/3065H01L21/20H01L21/687
Inventor 陈明德吴一经黄建栋
Owner UNITED MICROELECTRONICS CORP