TET LCD array substrate structure and its producing method

Abstract

This invention discloses a TFT LCD array base plate structure including: a base plate, a grid, grid scanning lines and a public electrode, in which, the public electrode is a base electrode of the storage capacitance, a grid insulation layer, an active layer and a channel on it, a data scanning line, source and drain, a top electrode of the storage capacitor formed above the grid insulation layer, a passivation layer and its through hole or groove formed above the drain and the storage capacitor top electrode, pixel electrode formed on the passivation layer and connected with the drain and the top electrode of the storage capacitor via the passivation layer through hole or groove. This invention also discloses a manufacturing method for said array base plate structure, which can reduce the area of light strips and the overlapped area between the light strip and pixel electrode, the publick electrode and the transparent electrode so as to increase the open-end rate and storage capacitance.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display (TFT LCD), in particular to a thin film transistor liquid crystal display array substrate structure and a manufacturing method thereof. Background technique [0002] TFT LCDs feature low power consumption, relatively low manufacturing costs, and no radiation, and currently dominate the flat panel display market. The matrix-type common electrode structure avoids cross-talk (Cross-Talk), flicker (Flicker) and horizontal white lines caused by electrode signal differences. However, although the structure of the matrix-type common electrode improves the signal uniformity, the structure has a loss in the aperture ratio of the pixel. The TFT LCD device storage capacitor is the main means to maintain the potential of the pixel electrode after the pixel scanning signal ends, and increasing the storage capacitor of the pixel uniformly can effectively improve the uniformity of the picture. I...

AI Technical Summary

Problems solved by technology

However, the common disadvantage of the above structures is that the aperture ratio decreases.

US Patent No. 6,953,715 is mainly aimed at changing the insulating layer material to control the size of the storage capacitor. The advantage is that there is no change in the structure. The disadvantage is that the materials used and the manufacturing process need to be changed.

U.S. Patent No. 6,661,477 designed an island gate electrode, and at the same time connected the pixel electrode to the metal of the source electrode layer to reduce the capacitance of the drain-source electrode, so as to improve the poor crosstalk. Although the pixel electrode is also connected to the metal of the source electrode layer in structure, it is not Involved in the storage capacitor improvement part

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