Method for cracking source oven molecular beam epitaxial indium phosphide using solid-state phosphorus

A technology of molecular beam epitaxy and source solution furnace, which is applied in the direction of chemical instruments and methods, polycrystalline material growth, and chemically reactive gases, and can solve problems such as beam current drop, substrate loss of phosphorus pressure protection, and waste of phosphorus sources, etc.

Inactive Publication Date: 2007-06-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

This is because if too much red phosphorus is converted into white phosphorus, if it is stored in a white phosphorus area, due to the high vapor pressure of phosphorus and improper control, it is easy to cause damage to the high vacuum required by the growth chamber of the MBE system, causing subsequent Difficulty growing the material; allowing it to deplete is a waste of an expensive phosphorus source
Or, if the conversion is too lit

Method used

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  • Method for cracking source oven molecular beam epitaxial indium phosphide using solid-state phosphorus
  • Method for cracking source oven molecular beam epitaxial indium phosphide using solid-state phosphorus

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Embodiment Construction

[0024] The present invention uses the 500cc fourth-generation phosphorus cracking source furnace (500cc Mark IV Phosphorus Valved Cracker Effusion Cell) in a Veeco Mod GEN II molecular beam epitaxy system as an example to demonstrate the conversion of desirable white phosphorus Quantitative method.

[0025] The steps involved in this method are as follows:

[0026] 1. In the MBE system, rotate the substrate heater (CAR) to the beam current position and set it to T stably 0 value. Each time the following steps are performed, this value must be maintained at a certain value, so as to keep the influence of the vacuum chamber environment on the beam current consistent when measuring the beam current.

[0027] 2. Raise the temperature of the cracking zone of the source furnace to 1150°C. During this process, gradually increase the valve value of the cracking valve until it is V 1 =295mil, and when the cracking zone temperature T c After the temperature is higher than 700°C, th...

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Abstract

The invention relates to a solid-state phosphor cracking source furnace molecular beam epitaxy indium phosphide material method. The method includes the following steps: rotating substrate heater to side beam flux position and heating cracking area in molecular beam epitaxy system; cooling the cracking area and heating red phosphorus area; closing cracking valve and cooling the red phosphorus area; setting required temperature value for the growing material; calculating phosphor source exhaustion time. The unique of the invention is that it can exactly control white phosphorus transformation quantity and exhaustion time, and extend out high performance indium phosphide material.

Description

technical field [0001] The invention relates to the technical field of molecular beam epitaxy phosphorus cracking furnace, in particular to a method for molecular beam epitaxy indium phosphide material using a solid phosphorus cracking source furnace. Background technique [0002] Phosphorus-containing compound semiconductors have excellent electrical and optical properties, and play an important role in the fields of optoelectronics and microelectronics. Therefore, how to prepare phosphorus-containing compound semiconductor materials with better performance is a very meaningful work. The unique advantages of MBE technology in controlling the accuracy of the epitaxial thickness and the uniformity of the epitaxial layer determine the irreplaceable position of this technology in the preparation of semiconductor materials. [0003] However, how to use phosphorus sources has always been a technical problem when preparing phosphorus-containing compound semiconductors by molecula...

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Application Information

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IPC IPC(8): C30B25/02C30B29/40
Inventor 李路刘峰奇周华兵梁凌燕吕小晶
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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