Method for cracking source oven molecular beam epitaxial indium phosphide using solid-state phosphorus

Abstract

The invention relates to a solid-state phosphor cracking source furnace molecular beam epitaxy indium phosphide material method. The method includes the following steps: rotating substrate heater to side beam flux position and heating cracking area in molecular beam epitaxy system; cooling the cracking area and heating red phosphorus area; closing cracking valve and cooling the red phosphorus area; setting required temperature value for the growing material; calculating phosphor source exhaustion time. The unique of the invention is that it can exactly control white phosphorus transformation quantity and exhaustion time, and extend out high performance indium phosphide material.

Description

technical field [0001] The invention relates to the technical field of molecular beam epitaxy phosphorus cracking furnace, in particular to a method for molecular beam epitaxy indium phosphide material using a solid phosphorus cracking source furnace. Background technique [0002] Phosphorus-containing compound semiconductors have excellent electrical and optical properties, and play an important role in the fields of optoelectronics and microelectronics. Therefore, how to prepare phosphorus-containing compound semiconductor materials with better performance is a very meaningful work. The unique advantages of MBE technology in controlling the accuracy of the epitaxial thickness and the uniformity of the epitaxial layer determine the irreplaceable position of this technology in the preparation of semiconductor materials. [0003] However, how to use phosphorus sources has always been a technical problem when preparing phosphorus-containing compound semiconductors by molecula...

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Problems solved by technology

This is because if too much red phosphorus is converted into white phosphorus, if it is stored in a white phosphorus area, due to the high vapor pressure of phosphorus and improper control, it is easy to cause damage to the high vacuum required by the growth chamber of the MBE system, causing subsequent Difficulty growing the material; allowing it to deplete is a waste of an expensive phosphorus source

Or, if the conversion is too little, the amount of phosphorus required for material preparation cannot be met, resulting in the growth of P 2 The beam current drops sharply, and the substrate loses its phosphorous pressure protection and is destroyed, which makes the experiment fail

[0007] However, even the data sheet for this phosphorus cracking furnace, including from source furnace manufacturer Veeco Precision Instruments, does not specifically mention this issue

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