Image sensor devices and photoelectric element

Abstract

The present invention provides an image sensor device and photoelectric element. The image sensor device includes a first area with image sensing pixel array disposed on the underlay, and a second area with a logic circuit disposed on the underlay, wherein the logic circuit includes CMOS transistor. Each image sensing pixel includes transistor without self-aligned silicide and pinning photodiode. The CMOS transistor of the second area has self-aligned silicide, but the transistor of the first area has no self-aligned silicide. The present invention forms no metal silicide on the surface of the image sensing pixel area, thereby reduce the dark current effectively and further get an image sensor device with high signal-noise ratio. On the other hand, only forming the metal silicide on the top of the gate structure of the CMOS logic circuit area and the surface of the source / drain area, so the computing rate for the CMOS logic circuit is improved remarkably.

Description

technical field [0001] The present invention relates to an image sensor device, in particular to a complementary metal oxide semiconductor (CMOS) field effect transistor image sensor and an optoelectronic device. Background technique [0002] Complementary metal-oxide-semiconductor field-effect transistor image sensors (CMOS image sensors) have been widely used in many application fields, including, for example, digital still cameras (digital still cameras, DSCs) and camera phones. The above application fields mainly utilize an active pixel array or an image sensor cell array including photodiode elements to convert incident image light energy into digital information. [0003] As far as the field of still digital cameras is concerned, the performance requirements for image sensing mainly include high image quality and low crosstalk and noise, and can provide high-quality images under low ambient light conditions. [0004] A conventional image sensing unit includes an activ...

AI Technical Summary

Problems solved by technology

However, the metal silicide located on the gate structure is a metastable substance, and the contained metal components will still diffuse to the photodiode area in the subsequent process, causing leakage spots of the photodiode. And obtain a low signal-to-noise ratio, thereby affecting the electrical properties and sensing results of the image sensing device

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