Method of manufacturing flash memory device

Abstract

A method of manufacturing a flash memory device. According to the invention, a floating gate can be formed and a distance between cells can be secured sufficiently by using one conductive layer without using a SA-STI process that cannot be applied to the manufacture process of high-integrated semiconductor devices. It is therefore possible to minimize an interference phenomenon between neighboring cells. Furthermore, an isolation film is etched after a photoresist film covering only a high-voltage transistor region is formed, or a gate oxide film is formed after a semiconductor substrate is etched at a thickness, which is the same as that of the gate oxide film of the high-voltage transistor region, so that a step between the cell region and the high-voltage transistor region is the same. Accordingly, the coupling ratio can be increased even by the gate oxide film of the high-voltage transistor region, which is thicker than the tunnel oxide film of the cell region. In addition, damage to a tunnel oxide film, a semiconductor substrate or a floating gate while an isolation film is etched at a predetermined depth in order to control the EFH can be prevented by controlling the EFH in such a manner than conductive layer spacers are formed on sidewalls of the floating gate and the isolation film is further etched.

Description

technical field

[0001] The present invention relates generally to semiconductor memory devices, and more particularly, to a method of manufacturing a flash memory device in which interference phenomena between adjacent cells can be minimized in a highly integrated semiconductor device and can be achieved by etching an isolation film with a predetermined thickness To control the effective field height (EFH) and improve the coupling rate. Background technique

[0002] NAND flash memory devices use Fowler-Nordheim (FN) tunneling phenomenon to inject electrons into floating gates to implement data programs, thereby achieving large capacity and high integration.

[0003] A NAND flash memory device includes a plurality of cell blocks. A cell block includes a plurality of cell strings (strings), wherein a plurality of cells for storing data are connected in series to form a string, and a drain select transistor and a source select transistor are respectively formed between the cel...

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