Method of manufacturing flash memory device
A technology of flash memory devices and high-voltage transistors, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as unit size reduction and quasi-margin reduction
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[0029] The present invention will be described below in conjunction with specific exemplary embodiments with reference to the accompanying drawings.
[0030] 1A to 1D are cross-sectional views showing a method of manufacturing a flash memory device according to a first embodiment of the present invention.
[0031] 1A, a tunnel oxide film 12, a first conductive layer 13, and a hard mask film 14 are sequentially formed on a semiconductor substrate 11. The first conductive layer 13 may preferably be formed to a thickness of 700 Ȧ to 1500 Ȧ by sequentially stacking an undoped polysilicon film and a doped polysilicon film to prevent warpage of the tunnel oxide film 12. The undoped polysilicon film may be formed to have a thickness that is half or less of the total thickness of the first conductive layer 13. Meanwhile, when the first conductive layer 13 is applied to a single-layer unit, it may preferably be formed to a thickness of 1000 Ȧ to 1500 Ȧ, and when the first conductive layer ...
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