Memory architecture with single-port cell and dual-port (read and write) functionality

Abstract

In a memory module having a designated group of memory cells assigned to represent a logical portion of the memory structure, a memory redundancy circuit having a redundant group of memory cells; and a redundancy controller coupled with the designated group and the redundant group. The redundancy controller, which can include a redundancy decoder, assigns the redundant group to the logical portion of the memory structure in response to a preselected memory group condition, e.g., a "FAILED" memory group condition. The redundancy controller also can includeselectable switches, for example, fuses, which can encode the preselected memory group condition. The designated group of memory cells and the redundant group of memory cells can be a memory row, a memory column, a preselected portion of a memory module, a selectable portion of a memory module, a memory module, or a combination thereof.

Description

[0001] The following related patent applications, assigned to the same assignee hereof and filed on even date herewith in the names of the same inventors as the present application, disclose related subject matter, with the subject of each being incorporated by reference herein in its entirety:[0002] Memory Module with Hierarchical Functionality, Attorney Docket No. 40050 / B600 / JFO; High Precision Delay Measurement Circuit, Attorney Docket No. 37079 / B600 / JFO; Single-Ended Sense Amplifier with Sample-and-Hold Reference, Attorney Docket No. 37362 / B600 / JFO; Limited Switch Driver Circuit, Attorney Docket No. 37361 / B600 / JFO; Fast Decoder with Asynchronous Reset with Row Redundancy; Attorney Docket No. 37115 / B600 / JFO; Diffusion Replica Delay Circuit, Attorney Docket No. 37360 / B600 / JFO; Sense Amplifier with Offset Cancellation and Charge-Share Limited Swing Drivers, Attorney Docket No. 37363 / B600 / JFO; Memory Architecture with Single-Port Cell and Dual-Port (Read and Write) Functionality, At...

AI Technical Summary

Problems solved by technology

In view of the trends toward compact, high-performance, high-bandwidth integrated computer networks, portable computing, and mobile communications, the aforementioned constraints can impose severe limitations upon memory structure designs, which traditional memory system and subcomponent implementations may fail to obviate.

Furthermore, the SRAM subsystems of many VLSI systems frequently are integrated relative to particular design implementations, with specific adaptions of the SRAM subsystem limiting, or even precluding, the scalability of the SRAM subsystem design.

As a result SRAM memory subsystem designs, even those considered to be "scalable", often fail to meet design limitations once these memory subsystem designs are scaled-up for use in a VLSI system with need for a greater memory cell population and / or density.

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