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Substrate for manufacturing a semiconductor device with three element alloy

a three-element alloy and substrate technology, applied in the direction of semiconductor/solid-state device details, conductive pattern reinforcement, printed circuit manufacturing, etc., can solve the problems of long documented adverse effects on humans and the environment, toxic to human individuals, and wide considered health hazards

Inactive Publication Date: 2002-06-20
ACQUTEK SEMICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007] An object of the present invention is to provide substrates that are lead-free and thus environmentally friendly, while at the same time, providing the desired characteristics of improved bondability, corrosion durability, adhesion to mold resin, and cost effectiveness.

Problems solved by technology

To achieve such characteristics, conventional substrates for a semiconductor device have used an outermost layer of Sn-Pb in a multi-plated layer structure also including a copper layer and nickel layer, However, lead is widely considered to be a health hazard.
Lead is toxic to human individuals and it has a long documented history of adverse impact on humans and the environment.
However, a palladium layer or a gold layer has manifest problems in wire bondability, adhesion to the mold resin, and attachment characteristics for a PCB.
Additionally, the costs of using palladium and of gold have traditionally been fairly high.

Method used

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  • Substrate for manufacturing a semiconductor device with three element alloy
  • Substrate for manufacturing a semiconductor device with three element alloy

Examples

Experimental program
Comparison scheme
Effect test

example 1

Comparative Example 1

[0025] Evaluation Test on Bondability

[0026] The results of each of the evaluation tests are shown in Tables 1 and 2. In the Tables, the conditions prepared for each example are marked as symbol ".cndot.". Table 1 represents the results of the evaluation test for the layer plated according to the present invention and Table 2 represents the results of the evaluation test for the layer on which Au or Ag alone, or Au / Ag alloy is deposited, for comparison. In Table 2, samples 12-18 are for Ag alone, samples 19-24 are for Au alone and samples 25-30 are for Au / Ag alloy.

1TABLE 1 LaminateTensile Structure Strength Thickness Ni Au / Ag / Se EDS Analysis in Wire (.mu.in) 30 50 70 5 10 15 (wt %) Bonding (g) Sample 1 .cndot. .cndot. Au 11, Ag 89 15.30 Sample 2 .cndot. .cndot. Au 16, Ag 84 15.60 Sample 3 .cndot..cndot. Au 22, Ag 78 15.40 Sample 4 .cndot. .cndot. Au 27, Ag 73 15.40 Sample 5 .cndot..cndot. Au 30, Ag 70 15.36 Sample 6 .cndot. .cndot. Au 35, Ag 65 16.21 Sample 7 .cn...

example 2

Comparative Example 2

[0029] Evaluation on Solder Wettability

[0030] The samples were evaluated on solder wettability. The condition of the samples was the same as Example 1 and Comparative Example 1. The results of the evaluation of the samples according to the present invention are presented in Table 3, and the results for the other samples are presented in Table 4. The Se content could not be detected by EDS analysis as in Table 1.

3TABLE 3 Laminate StructureCovered Thickness Ni Au / Ag / Se EDS Analysis Amount (.mu.in) 30 50 70 5 10 15 (wt %) (%) Sample 1 .cndot. .cndot. Au 11, Ag 89 99-100 Sample 2 .cndot. .cndot. .cndot. Au 16, Ag 84 99-100 Sample 3 .cndot..cndot. Au 22, Ag 78 99-100 Sample 4 .cndot. .cndot. Au 27, Ag 73 99-100 Sample 5 .cndot. .cndot. Au 30, Ag 70 99-100 Sample 6 .cndot. .cndot. Au 35, Ag 65 99-100 Sample 7 .cndot. .cndot. Au 30, Ag 70 99-100 Sample 8 .cndot..cndot. Au 33, Ag 67 99-100 Sample 9 .cndot. .cndot. Au 32, Ag 68 99-100 Sample 10 .cndot. .cndot. Au 34, Ag ...

example 3

Comparative Example 3

[0033] Evaluation on Adhesion of Mold Resin

[0034] The samples were evaluated on adhesion of the mold resin. The condition of the samples was the same as in Example 1 and comparative Example 1. The results of the evaluation for the samples according to the present invention are presented in Table 5, and the results for other samples are presented in Table 6. In comparative example 3, the layer of Au / Ag alloy was not used.

5TABLE 5 Laminate Structure Thickness Ni Au / Ag / Se EDS Analysis Adhesion of (.mu.in) 30 50 70 5 10 15 (wt %) Mold Resin Sample 1 .cndot. .cndot. Au 11, Ag 89 Pass Sample 2 .cndot. .cndot. Au 16, Ag 84 Pass Sample 3 .cndot..cndot. Au 22, Ag 78 Pass Sample 4 .cndot. .cndot. Au 27, Ag 73 Pass Sample 5 .cndot..cndot. Au 30, Ag 70 Pass Sample 6 .cndot. .cndot. Au 35, Ag 65 Pass Sample 7 .cndot. .cndot. Au 30, Ag 70 Pass Sample 8 .cndot. .cndot. Au 33, Ag 67 Pass Sample 9 .cndot. .cndot. Au 32, Ag 68 Pass Sample 10 .cndot. .cndot. Au 34, Ag 66 Pass Samp...

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Abstract

The substrate according to the present invention is comprised of a silver / gold / grain element alloy layer, wherein the alloy forms an outside layer of the product. The grain element is selected from a group consisting of selenium, antimony, bismuth, nickel, cobalt, indium and combination thereof. The present invention has a particular application in forming the outside layer of various items, including a lead frame, a ball grid array, a header, a printed circuit board, a reed switch and a connector.

Description

[0001] 1. Field of the Invention[0002] The present invention relates to a substrate comprising a three element alloy, and particularly, relates to a substrate wherein the three element alloy comprising the Au / Ag / grain element is applied to a nickel layer which is applied to the copper or copper alloy, or nickel or nickel alloy, to provide the desired characteristics of improved bondability, corrosion durability, adhesion to mold resin and cost effectiveness.[0003] 2. Background Art[0004] Generally, the substrates for a semiconductor device make electrical interconnections between electrical and electronic devices, which includes such devices as a semiconductor chip and a printed circuit board ("PCB"). Moreover, the characteristics of a good substrate material include bondability to connecting wires, durability from corrosion, adhesion to the mold resin (which typically acts as a cover), and ductility for manipulation.[0005] To achieve such characteristics, conventional substrates fo...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C25D7/12C22C5/06C25D5/12C25D7/00H01L23/14H01L23/48H01L23/495H01L23/498H01L23/50H05K3/24
CPCH01L23/142H01L23/49582H01L2924/00014H01L2924/10253H01L2924/01028H01L2924/01014Y10S438/927H01L23/49866H01L24/45H01L2224/45144H05K3/244H01L2924/00H01L2224/48H01L23/48
Inventor HONG, SOON SUNGLEE, JI YONGPARK, BYUNG JUN
Owner ACQUTEK SEMICON TECH