Semiconductor memory device
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first embodiment
[0041] [First Embodiment]
[0042] In this embodiment, the operation of a SCRC is controlled by a write command, and the SCRC is applied to write buffers of sub-amplifiers.
[0043] The outline of the configuration of a semiconductor memory device according to this embodiment is described with reference to FIG. 1. Specifically, the semiconductor memory device may be a 1 Gbit DDR-2 SDRAM. The semiconductor memory device includes a memory cell array MCA composed of a plurality of memory cells, address buffers (row address buffer and column address buffer) for designating an address in the memory cell array MCA, a row decoder RDE, a column decoder CDE, a row driver RDR, a column driver CDR, a sense amplifier SA for carrying out the read-write of data, a main amplifier MA, an output buffer DOB, an input buffer DIB, an input buffer DIB to which respective control signals are input, a main control circuit for generating an internal control signal, known units such as an internal voltage genera...
second embodiment
[0086] [Second Embodiment]
[0087] A second embodiment of the present invention will be described with reference to FIG. 6. The basic constitution is the same as that of the first embodiment. In the DDR-1 / DDR-2 combined-mounted DRAM, the SCRC configuration is further devised so as to be suitable for the DDR-1 specifications.
[0088] According to the DDR-1 specifications, the write latency WL is fixed at WL=1. Thus, in contrast to the first embodiment, the duration required to return the source potential of the transistors TN6 and TN7 in the write buffer portion to the ground potential can not be assured by setting the write latency at a long duration as in the first embodiment. Therefore, it is necessary to return the source potential to the ground potential earlier.
[0089] Therefore, according to this embodiment, in the case of coping with the DRAM having the specifications of DDR-1, the SCRC operation can be carried out with transistors having larger current supplying capabilities, s...
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