RF Plasma Source With Conductive Top Section

Abstract

A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.

Description

RELATED APPLICATION SECTION [0001] This application is a continuation-in-part of U.S. patent application Ser. No. 10 / 805,966, filed Mar. 22, 2004 entitled “Plasma Immersion Ion Implantation Apparatus and Method,” the entire application of which is incorporated herein by reference.INTRODUCTION [0002] The section headings used herein are for organizational purposes only and are not to be construed as limiting the subject matter described in any way. [0003] The present invention relates to plasma sources. Plasma sources are commonly used in the semiconductor industry and other industries for performing etching and deposition. Plasma immersion systems immerse a substrate or target in a plasma for processing. The substrate or target is biased with respect to the plasma potential in order to attract ions for processing. [0004] Recently plasma immersion systems have been used for performing ion implantation of semiconductor wafers. Ions are not accelerated toward the wafer like in conventi...

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Problems solved by technology

The secondary electrons tend to heat and to charge the chamber tops, whi

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