Semiconductor device and method of manufacturing the same

Abstract

As conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided.

Description

BACKGROUND OF THE INVENTION [0001] 1. Description of the Related Art [0002] The present invention relates to a semiconductor device and a method for manufacturing the same, particularly a semiconductor device radiating excellently heat from the semiconductor device and a method for manufacturing the same. [0003] 2. Description of the Related Art [0004] In recent years, use of IC package for portable equipment or small, hi-density mounting equipment progresses, and the conventional IC package and its concept of mounting are largely changing. These details are described in CSP technology, and mounting material and device supporting the technology—special issue of DENSHI ZAIRYO (p. 22, September 1998). [0005]FIG. 9 is a structure adopting a flexible sheet 50 as an interposer board, a copper foil pattern 51 is put on the flexible sheet through adhesive, and an IC chip is fixed. There is a pad for bonding 53 formed at periphery of the IC chip as the conductive pattern 51. A pad for conne...

AI Technical Summary

Benefits of technology

The solution enables the creation of thin, lightweight semiconductor devices with improved heat radiation capabilities and reduced production costs, while maintaining high reliability and electrical connectivity.

Problems solved by technology

However, the package-type semiconductor device 501 does not satisfy the requirements of down-sizing, thickness reduction and weight reduction, since the lead terminal 504 is led outside from the resin layer 503 and since the overall size of the device is large.

However, the ceramic substrate used herein is extremely brittle and is readily cracked, different from flexible sheets and glass-epoxy substrates, and is therefore problematic in that it is not applicable to resin mold sealing.

However in case of adopting a flexible sheet 50 as an interposer board, the flexible sheet formed on a rear surface of IC chip is very expensive, and there are problems that cost rises, thickness of the package becomes thick, and weight increases.

There is a problem that heat resistance from a back face of the IC chip to a back face of the package becomes large in a supporting board because the supporting board comprises material other than metal.

Therefore there is a problem that driving current does not flow fully because of temperature rise of IC chip at driving.

Heretofore, It has heretofore been difficult to provide a down-sized, thin-walled and lightweight circuit device that comprises these constitutive elements.

For these reasons, the glass-epoxy substrate 505 is indispensably used and it increases the production costs.

In addition, since the glass-epoxy substrate 505 is thick, the circuit device comprising it is inevitably thick and is limited in point of down-sizing, thickness reduction and weight reduction.

Further, the glass-epoxy substrate and the ceramic substrate indispensably require a step of forming through-holes through which the electrodes formed on the two surfaces thereof are connected to each other, and therefore manufacturing time is long and industrial-scale mass production is very difficult.

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